ECE MS Thesis Defense: Bo-Shiang Yang

ECE MS Thesis Defense: Bo-Shiang Yang

Title: Study of the Temperature Dependent Electron Mobility in GaN/ScAlN Heterostructures

Presenter: Bo-Shiang Yang

Advisor: Professor Enrico Bellotti

Committee: Professor Sahar Sharifzadeh and Professor Min-Chang Li

Abstract: III-nitride semiconductor heterostructures have emerged as critical materials for next-generation electronic devices. Structures such as AlGaN/GaN and ScAlN/GaN demonstrate significant promise for high-power, high-frequency, and high-temperature applications. Their distinctive material properties address the growing demand for more efficient electronic components. This thesis investigates electron transport mechanisms in AlGaN/GaN and ScAlN/GaN heterostructures through a combination of Poisson-Schrödinger solvers and Boltzmann transport calculations, focusing on the influence of polarization effects and scattering mechanisms on carrier mobility. The findings highlight a key design trade-off: ScAlN/GaN enables higher carrier densities, enhancing current handling capabilities, whereas AlGaN/GaN offers superior carrier mobility, making it more suitable for high-frequency performance.