MSE Colloquium: Krishna Shenai, Argonne National Laboratory

Abstract: For nearly five decades, silicon has remained as the industry workhorse for electrical power switching. In the past two decades, there has been a concerted effort to develop Silicon Carbide (SiC) and Gallium Nitride (GaN) power semiconductor devices because of their superior electrical and thermal performances compared to silicon power devices. However, the progress has been slow despite significant R&D investment. This talk will unravel critical issues that have hindered manufacturing and large-scale commercialization of reliable low-cost WBG power devices. We will identify “game changing” technical approaches and propose a collaborative partnership in order to “unlock” the enormous potential of WBG semiconductors for a wide range of power electronics applications.

Date: Friday, March 22nd 2013

Start Time: 3:00pm

End Time: 4:00pm

Location: 8 St Mary's St, Room 205


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