March 22, Krishna Shenai, Argonne National Laboratory

in Spring 2013
December 26th, 2012


3:00 PM in Room 205, 8 St. Mary’s Street

Refreshments served at 2:45

Wide Bandgap (WBG) Power Semiconductor Manufacturing Challenges

Abstract: For nearly five decades, silicon has remained as the industry workhorse for electrical power switching. In the past two decades, there has been a concerted effort to develop Silicon Carbide (SiC) and Gallium Nitride (GaN) power semiconductor devices because of their superior electrical and thermal performances compared to silicon power devices. However, the progress has been slow despite significant R&D investment. This talk will unravel critical issues that have hindered manufacturing and large-scale commercialization of reliable low-cost WBG power devices. We will identify “game changing” technical approaches and propose a collaborative partnership in order to “unlock” the enormous potential of WBG semiconductors for a wide range of power electronics applications.

Biography:Krishna Shenai earned his PhD degree in electrical engineering from Stanford University, Stanford, CA in 1986. He is employed as Principal Electrical Engineer within the Electrical Systems Division at Argonne National Laboratory, Argonne, IL where he is leading the effort to develop and commercialize wide bandgap semiconductor materials and devices for power electronics switching, power amplifier and sensor applications. For nearly 30 years, Dr. Shenai has pioneered and made seminal contributions to the development and manufacturing of power semiconductor materials and devices, and power converters and power amplifiers. He is a Fellow of IEEE, a Fellow of APS, a Fellow of AAAS, a Fellow of IETE-India, and a member of the Serbian Academy of Engineering. Dr. Shenai has authored or co-authored more than 350 peer-reviewed archival papers and 10 book chapters; edited six books; and, is a named inventor in 13 issued US patents. He was the Editor of IEEE Trans. Electron Devices (1990-2000), founding Editor-in-Chief (EIC) of IEEE Electron Devices Society Newsletter (1994-2002), and served as the invited guest editor for a Special Issue of IEEE Trans. Electron Devices and two Special Issues of IEEE J. Solid-State Circuits. Currently, he serves as a member of the IEEE EDS Technical Committees on “Semiconductor Manufacturing” and “Power Devices”; as an Associate Editor of IEEE Trans. Power Electronics special issue on “Wide Bandgap Semiconductor Power Electronics”; and as a co-guest editor of ECS J. Solid-State Science and Technology special issue on “Wide Bandgap Power Semiconductors.” Dr. Shenai is the founding lead organizer of the Electrochemical Society (ECS) Symposium on GaN and SiC Power Technologies; and, a member of the Board of Governors of Dielectrics Science & Technologies and Electronic and Photonics Divisions of the Electrochemical Society. Dr. Shenai founded and managed two venture financed startup companies to successful outcomes. He is a Distinguished Lecturer of IEEE Electron Devices Society and is the University Scholar award winner from the University of Illinois.


Faculty Host: Theodore Moustakas

Student Host: Denis Nothern