The WBSL is located on the 8th floor of the Center for Photonics Research. This a view of the Charles River from our laboratory on a nice day.
The Wide Bandgap Semiconductor Laboratory is a state-of-the-art facility dedicated to studying the growth, fundamental material properties, and fabrication of novel electronic and opto-electronic devices. The lab specializes in III-nitride growth by Molecular Beam Epitaxy(MBE) and Hydride Vapor Phase Epitaxy(HVPE). It has a history in the development of LEDs and currently continues to focus on LEDs and semiconductor lasers in the blue-UV region of the electromagnetic spectrum.
Research Highlights
  Visible and UV LEDs:   This research aims at developing efficient blue/UV LEDs for solid state lighting as well as for detection of chemical and biological agents by excitation of their fluorescence.
  UV semiconductor lasers:   Prototype lasers emitting below 250nm are being developed for detection of chemical and biological agents using Raman excitation.
  HVPE GaN templates:   This program is aiming at developing freestanding GaN substrates or thick GaN templates on sapphire substrates. Such substrates are currently being used for the development of UV and blue-green LEDs for solid state lighting applications.
  Nitrogen cluster source:   A Gas cluster source has been incorporated in one of our MBE systems and is being used for the development of a variety of materials, such as AlN, GaN, and InN. These clusters are ionized and accelerated to voltages up to 30kV and used for growth as well as processing of materials.
  A-plane growth of GaN:   GaN grows along the A-direction when deposited onto R-plane sapphire. The polarization vector of the A-plane is in its plane rather than perpendicular to the plane. Thus, devices based on MQWs are not suffering from the QCSE.

Pic of the moment

Room Temperature CL Spectra from a bulk AlGaN film with 85% Al content deposited under optimized conditions. The log scale plot shows that the band edge luminescence is three orders of magnitude stronger than the sub-bandgap emission.