Theodore Moustakas

moustakasProfessor (ECE, MSE, Physics)
PhD, Columbia University, 1974

Electro-Physics
Wide Band Gap Semiconductors
Materials Science and Engineering
, Co-Associate Division Head


(617) 353-5431
webpage
office: PHO 835
office hours: contact for appointment

Honors, Awards, and Editorships

  • 2013 Charter Fellow, National Academy of Inventors
  • Honorary Doctorate, Aristotle University for Excellence in Research
  • Fellow, American Physical Society
  • Fellow, Electrochemical Society
  • Fellow, IEEE
  • 2011 Distinguished Scholar of the BU College of Engineering
  • 2010 Molecular Beam Epitaxy (MBE) Innovator Award
  • 2009 BU College of Engineering Dean’s Catalyst Award
  • 1998 ECE Award for Excellence in Teaching
  • Cited in “Technology Transfer Works: 100 Cases from research to realization,” Better World Project
  • Special editor of the Journal of Vacuum Science and Technology and Journal of Electronic Materials

Classes Taught

  • EC411
  • EC471 Physics of Semiconductor Devices
  • EC577 Electronic Optical and Magnetic Properties of Materials
  • EC700 Advanced Special Topics
  • EC771 Physics of Compound Semiconductor Devices
  • EC892 Seminar: Electro-Physics

Research Interests

  • Growth, properties and applications of wide bandgap semiconductors of the GaN family. The materials are grown by Molecular Beam Epitaxy (MBE) and Hydrate Vapor Phase Epitaxy (HVPE). Device applications include optoelectronic devices covering the spectral range from deep UV to terahertz (LEDs, laser diodes, optical modulators, and detectors).

Additional Affiliations

Selected Publications

  • H. Sun, J. Woodward, J. Yin, A. Moldawer, E. F. Pecora, A. Yu. Nikiforov, L. Dal Negro, R. Paiella, K. Ludwig, Jr., D. J. Smith, and T. D. Moustakas, “Development of AlGaN-Based Graded-Index-Separate-Confinement-Heterostructure Deep UV Emitters by Molecular Beam Epitaxy,” Journal of Vacuum Science and Technology B, vol. 31, no. 03C117, May 2013.
  • E. F. Pecora, W. Zhang, A. Y. Nikiforov, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250nm Light Emission and Optical Gain in AlGaN Materials,” Journal of Applied Physics, vol. 113, no. 1, January 4, 2013.
  • T. D. Moustakas, “The Role of Extended Defects on the Performance of Optoelectronic Devices in Nitride Semiconductors,”Physica Status Solidi, vol. 210, no. 1, pp. 169-174, December 5, 2012.
  • J. R. Schneck, E. Dimakis, S. Erramilli, T. D. Moustakas and L.D. Ziegler, “Temperature Dependent Photon Echoes of a GaN Thin Film,” Applied Physics Letters, vol. 101, no. 14, October 1, 2012.
  • F. F. Sudradjat, W. Zhang, J. Woodward, H. Durmaz, T. D. Moustakas and R. Paiella, “Far-Infrared Intersubband Photodetectors Based on Double-Step III-Nitride Quantum Wells,” Applied Physics Letters, vol. 100, no. 24, June 14, 2012.
  • J. C. Woicik, K. F. Ludwig, Jr., and T. D. Moustakas, “Composition Dependent Bilayer Atomic Ordering in AlGaN Films Examined by Polarization-Dependent Extended X-Ray Absorption Fine Structure,” Applied Physics Letters, vol. 100, no. 16, April 17, 2012.
  • E. F. Pecora, W. Zhang,, J. Yin, R. Paiella, L. Dal Negro, T. D. Moustakas, “Polarization Properties of Deep-UV Optical Gain in Al-rich AlGaN Structures,”Applied Physics Express, vol. 5, February 29, 2012.
  • T. D. Moustakas, Y. Liao, C-k. Kao, C. Thomidis, A. Bhattacharyya, D. Bhattarai and A. Moldawer, “Deep UV-LEDs with High IQE Based on AlGaN Alloys with Strong Band Structure Potential Fluctuations,” Proceedings of SPIE, vol. 8278, February 9, 2012.
  • E. F. Pecora, W. Zhang, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250nm Room-Temperature Optical Gain from AlGaN/AlN Multiple Quantum Wells with Strong Band Structure Potential Fluctuations,” Applied Physics Letters, vol. 100, no. 6, February 7, 2012.
  • W. Zhang, A. Y. Nikiforov, C. Thomidis, J. Woodward, H. Sun, C.-K. Kao, D. Bhattarai, A. Moldawer, L. Zhou, D. J. Smith and T. D. Moustakas, “MBE Growth of AlGaN Quantum Wells on 6H-SiC  Substrates with High Internal Quantum Efficiency,” Journal of Vacuum Science and Technology B, vol. 30, no. 2, February 1, 2012.
  • T. D. Moustakas and A. Bhattacharyya, “The Role of Liquid Phase Epitaxy During Growth of AlGaN by MBE,”Physica Status Solidi C, vol. 9, no. 3-4, pp. 580-583, December 7, 2011.
  • L. Zhou, D. J. Smith, M. R. McCartney, T. Xu and T. D. Moustakas, “Measurement of Electric Field in Individual Wurtzite GaN Quantum Dots,” Applied Physics Letters, vol. 99, no. 10, September 7, 2011.
  • T. D. Moustakas and A. Bhattacharyya, “Experimental Evidence that the Plasma-Assisted MBE Growth of Nitride Alloys is a Liquid Phase Epitaxy Process,” ECS Transactions: 219th ECS Meeting, vol. 35, no. 6, pp. 63-71, May 1-6, 2011.
  • C.-K. Kao, A. Bhattacharyya, C. Thomidis, R. Paiella, and T. D. Moustakas, “Electroabsorption Modulators Based on Bulk GaN Films and GaN/AlGaN Multiple Quantum Wells,” Journal of Applied Physics, vol. 109, no. 8, article no. 083102, April 18, 2011.  (Also in the Virtual Journal of Nanoscale Science & Technology, May 2, 2011)
  • Y. Liao, C. Thomidis, C.-K. Kao, and T. D. Moustakas, “AlGaN Based Deep Ultraviolet Light Emitting Diodes with High Internal Quantum Efficiency Grown by Molecular Beam Epitaxy,” Applied Physics Letters, vol. 98, no. 8, article no. 081110, February 24, 2011.
  • F. Sudradjat, K. Driscoll, Y. Liao, A. Bhattacharyya, C. Thomidis, L. Zhou, D. J. Smith, T. D. Moustakas, and R. Paiella, “Sequential Tunneling Transport in GaN /AlGaN Coupled Quantum Wells Grown on Free-Standing GaN,” Journal of Applied Physics, vol. 108, no. 10, November 17, 2010.
  • J. Henson, E. Dimakis, J. Dimaria, R. Li, S. Minissale, L. Dal Negro, T. D. Moustakas and R. Paiella “Enhanced Near-Green Light Emission from InGaN Quantum Wells by Use of Tunable Plasmonic Resonances in Silver Nanoparticle Arrays,” Optics Express, vol. 18, no. 20, pp. 21322-21329, September 27, 2010.
  • J. Henson, J. C. Heckel, E. Dimakis, J. Abell, A. Bhattacharyya, G. Chumanov, T. D. Moustakas, and R. Paiella, “Plasmon Enhanced Light Emission from InGaN Quantum Wells via Coupling to Chemically Synthesized Silver Nanoparticles,” Applied Physics Letters, vol. 95, no. 15, October 15, 2009.
  • A. Bhattacharyya, T. D. Moustakas, L. Zhou, D. J. Smith, and W. Hug, “Deep Ultraviolet Emitting AlGaN Quantum Wells with High Internal Quantum Efficiency,” Applied Physics Letters, vol. 94, no. 18, article no. 181907, May 5, 2009.
  • T. D. Moustakas, T. Xu, C. Thomidis, A. Y. Nikiforov, L. Zhou, and D. J. Smith, “Growth of III-Nitride Quantum Dots and Their Applications to Blue-Green LEDs,” Physica Status Solidi (a), vol. 205, no. 11, pp. 2560-2565, November 2008.
  • E. Dimakis, A. Yu Nikiforov, C. Thomidis, L. Zhou, D. J. Smith. J. Abell, C.-K. Kao and T. D. Moustakas, “Growth and Properties of Near-UV Light Emitting Diodes Based on InN/GaN Quantum Wells,” Physica Status Solidi (a), vol. 205, no. 5, pp. 1070-1073, May 2008.
  • J. Abell and T. D. Moustakas, “The Role of Dislocations as Non-Radiative Recombination Centers in InGaN Quantum Wells”Applied Physics Letters, vol. 92, no. 9, article no. 091901, March 3, 2008.