Nano/microelectronic Device Technology

ENG ME 579

The main physical processes and manufacturing strategies for the fabrication and manufacture of micro and nanoelectronic devices will be covered, mostly for silicon, although exciting materials such as graphene and carbon nanotubes will also be covered. A key emphasis here will be on electron- hole transport, band structure, basic quantum effects, and the use of engineering and physical effects to alter semiconductor device performance. Photolithography, a significant factor in manufacturability, will be covered in some detail, and to a lesser degree, so will doping methods, diffusion, oxidation, etching, and deposition. The overall integration with methods and tools employed by device and circuit designers will be covered. Same as ENG EC 579; students may not receive credit for both.

FALL 2023 Schedule

Section Instructor Location Schedule Notes
A1 Cole CGS 323 TR 1:30 pm-3:15 pm Mts w/ENG ME579
Mts w/ENG EC579

FALL 2023 Schedule

Section Instructor Location Schedule Notes
DL Cole CGS 323 TR 1:30 pm-3:15 pm WebReg Restricted
Stamped Approval
Mts w/ENG ME579
Mts w/ENG EC579

Note that this information may change at any time. Please visit the Student Link for the most up-to-date course information.