Semiconductor nanofabrication process development for computational image sensors

Mentors

• 

  Roberto Paiella

  Professor (ECE, MSE)

• 

  Hriteshwar Talukder

  PhD Candidate

Project Description

Traditional photodetectors used for imaging applications are only sensitive to the intensity of the incident light, whereas all information related to phase and polarization is lost in the image acquisition process. To address this limitation, we are developing new types of image sensors that can directly measure multiple properties of any incident wave in a single shot. These devices are based on several new ideas from nanophotonics and are promising for the development of advanced imaging systems that could significantly improve our ability to sense and process visual information under conditions of limited intensity contrast. In turn, such systems could benefit countless applications of machine vision (from biomedical microscopy to remote sensing and autonomous navigation), by introducing capabilities that traditionally require extremely bulky setups or slow sequential measurements.

Timeline

We anticipate a timeline of 2-3 weeks to train the intern on the relevant tools in the cleanroom. The remaining time of the internship will be devoted to the fabrication and characterization of multiple test samples, data analysis, and preparation of the final poster presentation.