Fabrication Technology for Integrated Circuits
ENG EC 578
Presentation of fabrication procedures for silicon-integrated circuits: physical properties of bulk and epitaxially grown silicon; silicon processing, such as oxidation, diffusion, epitaxy, deposition, and ion implantation; silicon crystallography, anisotropic etching, photolithography, piezorestivity, and chemical and plasma techniques. The limitations these processes impose on the design of bipolar and MOS devices and integrated circuits are discussed. Design of an integrated circuit and the required processing. Includes lab. 4 cr.
FALL 2016 Schedule
|A1||Kleptsyn||SED 205||MW 2:00 pm-4:00 pm|