Fabrication Technology for Integrated Circuits

ENG EC 578

Presentation of fabrication procedures for silicon-integrated circuits: physical properties of bulk and epitaxially grown silicon; silicon processing, such as oxidation, diffusion, epitaxy, deposition, and ion implantation; silicon crystallography, anisotropic etching, photolithography, piezorestivity, and chemical and plasma techniques. The limitations these processes impose on the design of bipolar and MOS devices and integrated circuits are discussed. Design of an integrated circuit and the required processing. Includes lab. 4 cr.

FALL 2015 Schedule

Section Instructor Location Schedule Notes
A1 Kleptsyn STH 441 MW 2:00 pm-4:00 pm Class Full
A1 Kleptsyn ARR TBD-TBD Class Full

Note that this information may change at any time. Please visit the Student Link for the most up-to-date course information.