PhD Final Dissertation Defense: Haiding Sun

Development of Aluminum Gallium Nitride-based emitters operating in the UV and the visible spectral ranges-- Date: Tuesday, August 5, 2014, 2pm -- 8 Saint Mary's Street, Room 339 -- Chair: David Bishop (ECE) Advisor: Theodore D. Moustakas (ECE) Committee: Jonathan Klamkin (ECE); Roberto Paiella (ECE); Madis Raukas(PhD, OSRAM SYLVANIA) --- The development of ultraviolet semiconductor emitters (LEDs and lasers) will enable a large number of industrial and medical applications. Such include, for example, water / air / food sterilization, non-line-of-sight free space communication, medical diagnostics at the point of care and identification of chemical and biological agents. AlGaN alloys are ideally suited for the development of such devices since their energy gap can be tuned from the near UV (365 nm) to deep UV (200 nm). Similarly, the developments of more efficient methods to improve light extraction from blue / phosphor white LEDs will hasten the widespread application of LEDs for general illumination.