ECE Seminar with Dimitris Pavlidis

  • Starts: 6:30 pm on Friday, January 31, 2014
III-Nitride Devices for Electronics and Optoelectronics: From DC and Microwaves to the THz and Optical Spectrum With Dimitris Pavlidis, Research Professor, Boston University Program Director in Electronics, Photonics and Magnetic Devices (EPMD), National Science Foundation Faculty Host: Enrico Bellotti Refreshments will be served outside Room 339 at 1:15 p.m. Abstract: Wide bandgap semiconductors, such as III-Nitrides and II-VIs, offer unique semiconductor properties making them suitable for a variety of optical and electronic applications. These include energy harvesting and conversion, sensing and imaging for biomedical use, and communications. Components made with these materials operate from low to microwave and THz frequencies, extending even into the optical spectrum. Several device approaches will be presented by addressing their material growth, device design, processing and characterization. Metal Organic Chemical Vapor Deposition (MOCVD) has been used for material growth and obtaining the desired properties. Nanostructuring of such layers permitted device optimization via control of transport properties as well as bandgap and dimensionality. Components built with them include electronic and optoelectronic devices such as metal-insulator-semiconductor (MIS), thin-film transistors (TFTs), two-terminal devices for signal generation, as well as approaches for bio impedance spectroscopy and optical waveguiding. About the Speaker: Dimitris Pavlidis has been Research Professor at Boston University’s Department of Electrical and Computer Engineering since 2012 and Adjunct Professor (2004-present) of Electrical Engineering and Computer Science at the University of Michigan, Ann Arbor. In 2012, he joined the ECCS Division of the National Science Foundation as Program Director in Electronics, Photonics and Magnetic Devices (EPMD). He has been Chaired Professor at Darmstadt University of Technology, Germany (2003-2011), and Director of International Relations of the Institute of Electronics, Microelectronics and Nanotechnology (IEMN) in Lille, France, since 2003. From 1986 to 2004, he was Professor of Electrical Engineering and Computer Science at the University of Michigan, Ann Arbor. During 1980-1985, he was Engineer and Manager of the GaAs Monolithic Microwave Integrated Circuits (MMIC) Department of Thomson-CSF in Corbeville, France. In this capacity, he was responsible for projects on various III-V semiconductor monolithic circuits, their technology, and process evaluation. His research involves various types of semiconductor materials, devices, circuits, nanostructures and sensors and has applications in the electronic, optical, biological, and biomedical fields. His work on heterostructure devices and materials includes the design, fabrication and characterization of III-V-based HEMTs and HBTs, diodes for switching and mixing, III-Niotride-based HFETs, and two-terminal devices for operation extending to THz. His research also covers microwave/millimeter-wave monolithic heterostructure integrated circuits built with such devices, MEMS and sensors based on III-Vs, II-VIs as well as carbon nanotubes. His work covers InP, III-V Nitride and II-VI (oxides) based heterostructures using Metalorganic Chemical Vapor Deposition (MOCVD) and their device applications, as well as field-emission studies. His work in the above areas has been reported in numerous papers and reports, and he holds eight patents.
Photonics Center, 8 Saint Mary’s St., Room 339

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