{"id":2139,"date":"2016-02-10T11:12:12","date_gmt":"2016-02-10T15:12:12","guid":{"rendered":"https:\/\/www.bu.edu\/eng\/?post_type=profile&#038;p=2139"},"modified":"2026-04-06T12:52:05","modified_gmt":"2026-04-06T16:52:05","slug":"theodore-moustakas","status":"publish","type":"profile","link":"https:\/\/www.bu.edu\/eng\/profile\/theodore-moustakas\/","title":{"rendered":"Theodore Moustakas, PhD"},"content":{"rendered":"<h3>In the News<\/h3>\n<div style=\"background-color: #f5f5f5; padding: 0.5em; box-shadow: -7px -7px 0 #dcdcdc;\"><span><ul class=\"news_list category_1159\"><li class=\"post_172196\">\n<h4 class=\"news_post_title\"><a href=\"https:\/\/www.bu.edu\/eng\/2026\/03\/26\/a-history-of-innovation-at-boston-university\/\">A History of Innovation at Boston University<\/a><\/h4>\n<p class=\"excerpt\">In the 150 years since a BU professor invented the telephone, plenty of other BU-bred inventions have made profound and lasting impacts across society. <a class=\"more\" href=\"https:\/\/www.bu.edu\/eng\/2026\/03\/26\/a-history-of-innovation-at-boston-university\/\">[ More ]<\/a><\/p>\n<\/li>\n\n<li class=\"post_172208\">\n<h4 class=\"news_post_title\"><a href=\"https:\/\/www.bu.edu\/eng\/2026\/03\/26\/innovation-spotlight-theodore-moustakas-and-modern-display-technology\/\">Innovation Spotlight: Theodore Moustakas and Modern Display Technology<\/a><\/h4>\n<p class=\"excerpt\">BU Today recently highlighted the university's long-standing legacy of innovation in the... <a class=\"more\" href=\"https:\/\/www.bu.edu\/eng\/2026\/03\/26\/innovation-spotlight-theodore-moustakas-and-modern-display-technology\/\">[ More ]<\/a><\/p>\n<\/li>\n\n<\/ul>\n<\/span><\/div>\n<p><strong>Selected Publications<\/strong><\/p>\n<ul>\n<li>T. D. Moustakas and R. Paiella, \u201cOptoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz: a review\u201d (Invited) Rep. Prog. Phys. 80, 106501 (2017)<\/li>\n<li>T. D. Moustakas, \u201cUltraviolet Optoelectronic devices based on AlGaN alloys grown by MBE\u201d, MRS Communications, Vol. 6, pp. 247-269 (2016) DOI:10.1557\/mrc.2016.26<\/li>\n<li>T. D. Moustakas \u201cThe role of extended defects on the performance of optoelectronic devices in nitride semiconductors\u201d Physica Status Solidi A 210, No.1, 169-174 (2013). DOI 10.1002\/pssa.201200561<\/li>\n<li>E. Francesco Pecora, Wei Zhang, Lin Zhou, David J. Smith, Jian Yin, Roberto Paiella, Luca Dal Negro, T. D. Moustakas, \u201cSub-250nm room-temperature optical gain from AlGaN\/AlN multiple quantum wells with strong band structure potential fluctuations\u201d, Phys. Lett. 100, 061111 (February 2012)<\/li>\n<li>F. Pecora, W. Zhang, A. Yu. Nikiforov, J. Yin, R. Paiella, L. Dal Negro and T. D. Moustakas, \u201cSub-250 nm light emission and optical gain in AlGaN materials\u201d J. Appl. Phys. 113, 013106 (Jan. 2013)<\/li>\n<li>Wei Zhang, A. Yu. Nikiforov, C. Thomidis, J. Woodward, H. Sun, Chen-Kai Kao, D. Bhattarai, A. Moldawer, L. Zhou, D. J. Smith and T. D. Moustakas<sup><\/sup>, \u201cMBE growth of AlGaN quantum wells on 6H-SiC substrates with high internal quantum efficiency\u201d Journal of Vacuum Science and Technology B 30 (2), 02B119-1 (March 2012)<\/li>\n<li>D. Moustakas and A. Bhattacharyya, \u201cThe role of liquid phase epitaxy during growth of AlGaN by MBE\u201d,Phys. Status Solidi C 9, No. 3\u20134, 580\u2013583 (January 2012)<\/li>\n<li>Josh Abell and T. D. Moustakas, \u201cThe role of dislocations as non-radiative recombination centers in InGaN MQWs\u201d Phys. Lett. 92, 091901 (2008)<\/li>\n<li>E. Dimakis, A. Yu Nikiforov, C. Thomidis, L. Zhou, D. J. Smith. J. Abell, C \u2013K. Kao and T. D. Moustakas, \u201cGrowth and properties of near-UV light emitting diodes based on InN \/ GaN quantum wells\u201d Physica Status Solidi (a) <u>205<\/u>, 1070 (2008)<\/li>\n<li>W. Pan, E. Dimakis, G.T. Wang, T.D. Moustakas, and D.C. Tsui, \u201cTwo-dimensional electron gas in monolayer InN quantum wells\u201d, Appl. Phys. Lett. 105, 213503 (2014)<\/li>\n<li>A. Bhattacharyya, T. D. Moustakas, Lin Zhou, David J. Smith and W. Hug, \u201cDeep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency\u201d Appl. Phys. Lett. <u>94,<\/u>181907 (2009)<\/li>\n<li>Y. Liao, C. Thomidis, C-K. Kao, and T. D. Moustakas, \u201cAlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy&#8221; Appl. Phys. Lett. 98, 081110 (February 2011)<\/li>\n<li>T. D. Moustakas, Y. Liao, C-k. Kao, C. Thomidis, A. Bhattacharyya, D. Bhattarai and A. Moldawer (Invited paper), \u201cDeep UV-LEDs with high IQE based on AlGaN alloys with strong band structure potential fluctuations\u201d Proc. of SPIE Vol. 8278, 82780L-1 (March 2012)<\/li>\n<\/ul>\n","protected":false},"author":14935,"template":"","affiliation":[207],"department":[122,136],"_links":{"self":[{"href":"https:\/\/www.bu.edu\/eng\/wp-json\/wp\/v2\/profile\/2139"}],"collection":[{"href":"https:\/\/www.bu.edu\/eng\/wp-json\/wp\/v2\/profile"}],"about":[{"href":"https:\/\/www.bu.edu\/eng\/wp-json\/wp\/v2\/types\/profile"}],"author":[{"embeddable":true,"href":"https:\/\/www.bu.edu\/eng\/wp-json\/wp\/v2\/users\/14935"}],"version-history":[{"count":3,"href":"https:\/\/www.bu.edu\/eng\/wp-json\/wp\/v2\/profile\/2139\/revisions"}],"predecessor-version":[{"id":172549,"href":"https:\/\/www.bu.edu\/eng\/wp-json\/wp\/v2\/profile\/2139\/revisions\/172549"}],"wp:attachment":[{"href":"https:\/\/www.bu.edu\/eng\/wp-json\/wp\/v2\/media?parent=2139"}],"wp:term":[{"taxonomy":"affiliation","embeddable":true,"href":"https:\/\/www.bu.edu\/eng\/wp-json\/wp\/v2\/affiliation?post=2139"},{"taxonomy":"department","embeddable":true,"href":"https:\/\/www.bu.edu\/eng\/wp-json\/wp\/v2\/department?post=2139"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}