ECE Seminar with Dr. Rasit O. Topaloglu

Knocking at the 10 nm Gate Dr. Rasit O. Topaloglu Advisory R&D Engineer IBM Faculty Host: Ayse Coskun Refreshments will be served outside Room 339 at 10:45 a.m. Abstract: With 22 nm products available in the market in 2012, industry is very close to the 10 nm gate size for semiconductor integrated circuits. While individual transistors are demonstrated at such small scales, making manufacturable chips out of them entails another degree of difficulty and effort. This talk outlines what needs to be done to take an individual device and turn it into a large chip at such advanced nodes of technology. Dr. Topaloglu will furthermore discuss the types of advances needed both in terms of devices as well as manufacturability to get down to the 10 nm limit and to even surpass it. About the Speaker: Dr. Rasit O. Topaloglu has been an advisory R&D engineer at IBM, East Fishkill, N.Y., since 2011. He works on design for manufacturability and technology assurance at IBM. Previously, he worked for AMD and GLOBALFOUNDRIES, most recently as a principal engineer, starting in 2005. He has a PhD in Computer Engineering from the University of California, San Diego, and a BS in Electrical and Electronic Engineering from Bogazici University. He has over forty publications, five granted patents, and a Best Paper Award at IEEE International Symposium on Quality Electronic Design. He was the General Chair of the DAC Workshop on More than Moore Technologies in 2012 (www.motmoo.com). He serves on the Technical Advisory Board at Semiconductor Research Corporation for IBM.

Date: Friday, November 30th 2012

Start Time: 11:00am

End Time: 12:00pm

Location: Photonics Center, 8 Saint Mary’s St., Room 339

URL: http://www.bu.edu/ece/files/2012/10/Topaloglu.pdf

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