Publications Related to III-V Nitride Thin Films  
     
  Crystal Growth| Devices|InGaN| AlGaN|Ordering and Phase Seperation| Dislocation Scattering|Characterization| Processing|Structure |Mg-doped p-GaN  
     
  Crystal Growth  
     
 
  • “Enhanced light extraction and spontaneous emission from “wrnkled” quantum wells grown by plasma-assisted Molecular Beam Epitaxy” J. C. Cabalu, C. Thomidis, I. Friel and T.D. Moustakas and S. Riyopoulos, 22nd North American Molecular Beam Epitaxy Conference. (Abstract book, p.110, submitted to J. of Vacuum Science and Technology).
     
  • “GaN Quantum Dots grown at High Temperatures by Molecular Beam Epitaxy” Tao Xu, Adrian Williams, Christos Thomidis, and Theodore D. Moustakas, Mat. Res. Soc. Proc. (Abstract book p. 104, Boston, MA, 2004). (Accepted for publication in the MRS Internet Journal).
     
  • “Growth and Physics of GaN-based wrinkled Quantum Wells by MBE” J. Cabalu, C. Thomidis, T. D. Moustakas, and S. Riyopoulos, Mat. Res. Soc. Proc. (Abstract book p. 130) (Boston, MA, 2004).
     
  • “Growth of InN Films by Cluster Beam Epitaxy and RF Plasma-assisted MBE”, Tai-Chu P.Chen, C. Thomidis, J. Abell, A. Bhattacharyya and T. D. Moustakas, Mat. Res. Soc. Proc. (Abstract book p. 114) (Boston, MA, 2004).
     
  • “Sensors based on SiC-AlN MEMS”( INVITED), D.Doppalapudi, R.Milcak,J.Chan,H.L.Tuller, J.Abell, W.Li and T.D. Moustakas, Proceedings of the Electrochemical Society Meeting (Honolulu, 2004).
     
  • “Enhanced Light Extraction and Spontaneous Emission from Textured GaN Templates Formed During Growth by the HVPE Method”, Jasper S. Cabalu, Christos Thomidis, Theodore D. Moustakas and Spilios Riyopoulos, Proceedings of the Electrochemical Society Meeting (Honolulu, 2004).
     
  • “MBE Grown AlN Films on SiC for Piezoelectric MEMS Sensors” D. Doppalapudi, R. Mlcak, J. Chan, H. Tuller, A. Bhattacharya, and T. Moustakas, Mat. Res. Soc. Proc. Vol 798, 403 (2004).
     
  • “Development of 50 mm Diameter non-polar GaN Substrates for Device Applications”. H. P. Maruska, D. W. Hill , M.M.C. Chou, J.J. Gallagher, B.H. Chai, R.Vanfleet, J. Simmons, A. Bhattacharyya, I. Friel, J. Cabalu, C.Thomidis and T. D. Moustakas, Proc. of 2003 Indium Phosphide and Related Materials (in Press)
     
  • “Nitrogen Gas-Cluster Ion Beam –A new Nitrogen Source for GaN Growth” Y Shao, T.C. Chen, D. B. Fenner, T. D. Moustakas, and G. Chu, Mater. Res. Soc. Symp. Proc., Vol. 743, pp L3.10 (2003)
     
  • “Growth and Characterization of non–polar (11-20) GaN and AlGaN/GaN MQWs on R-plane (10-12) sapphire” S. Iyer, D. J. Smith A. Bhattacharyya, K. Ludwig Jr. and T. D. Moustakas Mater. Res. Soc. Symp. Proc., Vol. 743, pp. L3.20 (2003)
     
  • “Growth of III-Nitrides by MBE”(INVITED) , in Widebandgap Semiconductors for Photonic and Electronic Devices and Sensors , A.V. Sampath, E. Iliopoulos, A. Bhattacharyya, I. Friel, Sandeep Iyer, J. Cabalu, T.D. Moustakas, Electrochem Soc Proc. 2002-3, 46 (2002).
     
  • “High Reflectivity and Crack-free AlGaN/AlN UV Distributed Bragg Reflectors” A. Bhattacharyya, I. Friel, Sandeep Iyer, E. Iliopoulos, A.V. Sampath, J. Cabalu, T.D. Moustakas, J. Vac. Sci. and Technol. B 20, 1229 (2002)
     
  • “MBE Growth of GaN using NH3 and Plasma sources” A.Sampath, A.Bhattacharyya, I.Sandeep, H.M.Ng, E.Iliopoulos, T.D.Moustakas, Mat.Res. Soc. Symp. Vol. 639 , G6.56 (2001)
     
  • “Epitaxial growth and self organized superlattice structures in AlGaN films grown by plasma assisted molecular beam epitaxy” E.Iliopoulos, K.F.Ludwig Jr., T.D.Moustakas, Ph. Komninou, Th. Karakostas, G.Nouet, S.N.G.Chu Material Science and Engineering –B 87, 227 (2001)
     
  • “Growth and Device Applications of III-Nitrides by MBE”, T.D. Moustakas, E. Iliopoulos, A.V. Sampath, H.M. Ng, D. Doppalapudi, M. Misra, D. Korakakis, R. Singh, J. of Crystal Growth, 227-228, 13 (2001)
     
  • “Group III Nitride VCSELS structures grown by Molecular Beam Epitaxy” H.M.Ng, T.D.Moustakas (INVITED) Physics and Simulation of Optoelectronic Devices – Proceedings of SPIE 3944, 22 (2000).
     
  • "High Reflectance III-Nitride Bragg reflectors grown by molecular beam epitaxy", H. M. Ng and T. D. Moustakas MRS Internet Journal Nitride Semiconductor Research, 5S1, W1.8 (2000).
     
  • "High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by Molecular Beam epitaxy", H. M. Ng and T. D. Moustakas Appl. Phys. Lett., 76, 2818(2000).
     
  • "Distributed Bragg Reflectors based on AlN/GaN multilayers.", in III-V Nitride Materials and Processes, T.D. Moustakas, S. Mohney and S. Pearton Eds, H. M. Ng, D.Doppalapudi, E. Illiopoulos and T.D. Moustakas ECS Proc. 98-18, 129 (1999).
     
  • "Threading Defect reduction in laterally overgrown GaN films by Hydride Vapor Phase Epitaxy." in III-V Nitide Materials and Processes, T.D. Moustakas, S. Mohney and S. Pearton Eds. D. Doppalapudi, K. J. Nam, A. Sampath, R. Singh, H. M. Ng, S. N. Basu and T.D. Moustakas ECS Proc. 98-18, 87 (1999).
     
  • "Epitaxial Growth of Gallium Nitride Thin Films on A-Plane Sapphire by Molecular Beam Epitaxy." D. Doppalapudi, E. Iliopoulos, S.N Basu, and T.D. Moustakas J. Appl.Phys. 85, 3582 (1999).
     
  • "Distributed Bragg Reflectors based on AlN/GaN Multilayers." H.M. Ng, D. Doppalapudi, E. Iliopoulos and T.D Moustakas. Appl. Phys. Lett. 74, 1036, (1999).
     
  • "Growth of bulk GaN by reaction of Ga/Sn with Activated Nitrogen" T.D. Moustakas and J. P. Dismukes in III-V Nitride Material and Processes. Edited by Abernathy et al. ECS Proc. 97-34. p.284. (1998)
     
  • "Effect of Nitridation and Buffer in GaN Films Grown on A-plane (11-20) Sapphire." D. Doppalapudi, F. Iliopoulos, S.N. Basu and T.D. Moustakas Mat. Res. Soc. Symp. Proc. 482, 51(1998)
     
  • “Stimulated Emission from as-grown GaN hexagons by selective area growth hydride vapor phase epitaxy” W.D. Herzog, R. Singh, B.B.Goldberg, T.D. Moustakas, F.P. Dabkowski and M.S. Unlu, Electron Lett. , 34, 1970 (1998)
     
  • "Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique”. R. Singh, R. Barett, J. Gomes, F. Dabkowski and T.D. Moustakas MRS Internet J. Nitride Semicond. Res. Vol.3, Art. 3 (1998)
     
  • "MBE growth and doping of III-V nitrides," H.M. Ng, D. Doppalapudi, D. Korakakis, R. Singh and T.D. Moustakas, J. Crys. Growth 189/190, 349 (1998).
     
  • "Growth and Doping of GaN Directly on 6H-SiC by MBE," D. Korakakis, A. Sampath, H.M. Ng, G. Morales, I.D. Goepfert, and T.D. Moustakas, MRS Proc., 395, (1996).
     
  • "Epitaxial Growth of GaN Films Produced by ECR-Assisted MBE," T.D. Moustakas, MRS Proc., 395, (1996).
     
  • "Growth of III-V Nitrides by ECR-Assisted MBE and Fabrication of Opto-Electronic Devices," T.D. Moustakas, R.P. Vaudo, R. Singh, D. Korakakis, M. Misra, A. Sampath, and I.D. Goepfert, Proc. of Int. Conf. on Silicon Carbide and Related Materials, (Kyoto, Japan, Sept. 1995).
     
  • "Growth of Gallium Nitride by Electron-Cyclotron-Resonance Plasma-Assisted Molecular Beam Epitaxy: The Role of Charged Species," R.J. Molnar and T.D. Moustakas, J. Appl. Phys., 76, 4587 (1994).
     
  • "Growth of GaN by Plasma Enhanced MOCVD for High Temperature Device Applications," L.D. Zhu, P.E. Norris, J. Zhao, R. Singh, R. Molnar, O. Razumovsky, and T.D. Moustakas, Int. Conf. on High Temperature Electronics, (1994).
     
  • "Growth of GaN by ECR-Assisted MBE," T.D. Moustakas, T. Lei and R.J. Molnar, Physica B, 185, 36 (1993).
     
  • "Growth of Gallium Nitride Thin Films by Electron Cyclotron Resonance Microwave Plasma-Assisted Molecular Beam Epitaxy," C.R. Eddy, T.D. Moustakas and J. Scanlon, J. Appl. Phys, 73, 448 (1993).
     
  • "Growth and Doping of GaN Films by ECR-Assisted MBE," T.D. Moustakas and R.J. Molnar, Mat. Res. Soc.. Symp. Proc. "Semiconductor Heterostuctures for Photonic and Electronic Application", 281, 753 (1993).
     
  • "Heteroepitaxy, Polymorphism, and Faulting in GaN Thin Films on Silicon and Sapphire Substrates," T. Lei, K.F. Ludwig and T.D. Moustakas, J. Appl. Phys, 74, 4430 (1993).
     
  • "Epitaxial Growth and Characterization of Zinc-blende Gallium Nitride on (001) Silicon," T. Lei, T.D. Moustakas, R.J. Graham, Y. He and S.J. Berkowitz, J. Appl. Phys., 71, 4933 (1992).
     
  • "A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE," T.D. Moustakas, T. Lei, R.J. Molnar, S.R. Berkowitz, Mat. Res. Soc.. Symp. Proc., 242, ed. by T.D. Moustakas, J.I. Pankove and Y. Hamakawa (1992), p. 427.
     
  • "A Comparative Study of GaN Epitaxy on Si (001) and Si (111) Substrates," T. Lei and T.D. Moustakas, Mat. Res. Soc.. Symp. Proc., 242, ed. by T.D. Moustakas, J.I. Pankove and Y. Hamakawa (1992), p. 433.
     
  • "Growth of Tetrahedral Phases of Boron Nitride Thin Films by Reactive Sputtering," T.D. Moustakas, R.J. Molnar, T. Lei, Mat. Res. Soc.. Symp. Proc., 242, ed. by T.D. Moustakas, J.I. Pankove and Y. Hamakawa (1992), p. 599.
     
  • "Epitaxial Growth of Zincblende and Wurtzitic Gallium Nitride Thin Films on (001) Silicon," T. Lei, M. Fanciulli, R.J. Molnar, T.D. Moustakas, R.J. Graham and J.Scanlon, Appl. Phys. Lett., 59, 944 (1991).
  
     
  Devices - Detectors  
     
 
  • “Ultraviolet Electroabsorption Modulator based on AlGaN/GaN Multiple Quantum Wells” I. Friel, C. Thomidis, T. D. Moustakas, J. of Appl. Phys.97 2005.
     
  • “Growth and Fabrication of high Reverse Breakdown Heterojunctions n-GaN: p-6H-SiC Diodes" A. V. Sampath, A. Bhattacharyya, R. Singh, C.R.Eddy, P. Lamarre, W.F. Stacey, R.S. Morris and T.D. Moustakas Mater. Res. Soc. Symp. Proc., Vol. 743, pp. L6.34 (2003).
     
  • “Micromachined SiC-AlN Bulk Resonator Array Sensor Platform for Ultra Sensitive Explosive Detection”, R.Mlcak, D.Doppalapudi, J.Chan, A.Sampath, T.D.Moustakas, H.L.Tuller, 3rd International Aviation Technology Symposium, (Nov 27-30, 2001)
     
  • “GaN Schottky diode ultraviolet detectors grown by MBE” M.Misra, A.V.Sampath, E.Iliopoulos, T.D. Moustakas Photodetectors: Materials and Devices V-Proceedings of SPIE 3948, 342(2000).
     
  • “GaN photodiodes by MBE on HVPE and ELO-HVPE/Sapphire substrates”, A.V.Sampath, E.Iliopoulos, K.Seth, M.Misra, H.M.Ng, P.Lamarre, Z.Feit, T.D. Moustakas Photodetectors: Materials and Devices V– Proceedings of SPIE 3948, 311(2000).
     
  • "A Comparative Study of GaN diodes grown by MBE on sapphire and sapphire/HVPE-GaN substrate", A. V. Sampath, M. Misra, K. Seth, Y. Fedyunin, H. M Ng, E. Illiopolus, Z. Fiet and T. D. Moustakas MRS Internet Journal Nitride Semiconductor Research, 5S1,W11.1(2000).
     
  • "Ultraviolet Photoconducting Detectors based on Ordered AlGaN films grown by Molecular Beam Epitaxy." in III- V Nitride Materials and Processes, T.D. Moustakas, S. Mohney and S. Pearton Eds. M. Misra, D. Korakakis, H.M. Ng and T.D. Moustakas. Eds ECS Proc. 98-18, 30 (1999).
     
  • "Photoconductive detectors based on partially ordered AlxGa1-xN alloys grown by molecular beam epitaxy." M. Misra, D. Korakakis, H.M. Ng and T.D. Moustakas. Appl. Phys. Lett. 74, 2203 (1999)
     
  • "Photoconducting properties of Ultraviolet Detectors based on GaN and Al(x)Ga(1-x)N Grown by ECR-assisted MBE," M. Misra, D. Korakakis, R. Singh, A. Sampath and T.D. Moustakas, MRS Proc., 449, 597, (1997).
     
  • "Photoconducting Ultraviolet Detectors Based on GaN Films Grown by Electron Cyclotron Resonance Molecular Beam Epitaxy," M. Misra, T.D. Moustakas, R.P. Vaudo, R. Singh, and K.S. Shah, Proc. of SPIE Conf. on X-Ray and UV Sensors and Applications, 2519, 78 (1995).
  
     
  Devices - Emitters  
     
 
  • “MBE grown 340 nm UV-LED structures based on GaN/AlGaN MQWs” A. Bhattacharyya, J. Cabalu, C.Thomidis, C. J. Collins and T. D. Moustakas, 22nd North American Molecular Beam Epitaxy Conference. (Abstract book, p.110, submitted to J. of Vacuum Science and Technology).
     
  • “Nitride LEDs based on Flat and “wrinkled” Quantum Wells” J. C. Cabalu, C. Thomidis, I. Friel and T.D. Moustakas, Quantum Sensing and Nanophotonic Devices, Proc. Of the SPIE, Vol. 5732.
     
  • “High Power 340nm UV-LEDs grown by plasma-assisted MBE” J. Cabalu, C. Thomidis, A. Bhattacharyya T. D. Moustakas and C. Collins, Mat. Res. Soc. Proc. (Abstract book p. 137) (Boston, MA, 2004).
     
  • "Characteristics of Light-Emitting Diodes Based on GaN p-n Junctions Grown by Plasma-Assisted MBE," R.P. Vaudo, I.D. Goepfert, T.D. Moustakas, D.M. Beyea, T.J. Frey, and K. Meehan, J. Appl. Phys., 79, 2779 (1996).
     
  • "Blue-violet Light Emitting Gallium Nitride p-n Junctions Grown by Electron Cyclotron Resonance-Assisted Molecular Beam Epitaxy," R.J. Molnar, R. Singh, and T.D. Moustakas, Appl. Phys. Lett., 66, 268 (1995).
     
  • "Growth and Characterization of P/N Type GaN Grown at Reduced Substrate Temperatures by Plasma Enhanced (PE-) MOCVD," L.D. Zhu, P.E. Norris, J. Zhao, R. Singh, R. Molnar, O. Razumovsky, and T.D. Moustakas, Compound Semiconductors, 1994, Institute of Phys. Conf. Ser. 141, 113 (1994).
  
     
  Devices - Transistor  
     
 
  • “Design and Fabrication of GaN –based Permeable-base Transistor” Jasper S. Cabalu, Liberty L. Gunter, Ian Friel, A.Bhattacharyya, Y. Fedyunin, K. Chu, E. Bellotti, C. Eddy and T. D. Moustakas Mat. Res. Soc. Symp. Proc. Vol. 798, 85 (2004).
     
  • “Design and Fabrication of GaN-based Static Induction Transistor”( INVITED), Enrico Bellottti and T.D. Moustakas, Symposium Proceedings on Static Induction Devices, SSID02, Vol.15, (Tokyo,Japan, 2002).
     
  • "Modeling of a GaN based Static Induction Transistor", G.E. Bunea, S.T. Dunham, and T.D. Moustakas MRS Internet J. Nitride Semicond. Res. 4s1, G6.41 (1999).
     
  • "High-Temperature GaN/SiC Heterojunction Bipolar Transistor with High Gain," J. Pankove, S.S. Chang, H.C. Lee, R.J. Molnar, T.D. Moustakas, and B. Van Zeghbroeck, IEDM-94, 389, (1994).
  
     
  InGaN alloys  
     
 
  • “X-ray Spectroscopic Studies of the bulk Electronic Structure of InGaN Alloys” C.McGuinness, J.E.Downes, P.Ryan, K.Smith, D. Doppalapudi and T.D. Moustakas Mat. Res. Soc. Symp. Proc. Vol. 743, pp.L10.11.1 (2003).
     
  • “Surface Degradation of InGaN Thin Films by sputter-Anneal Processing: A Photoemission Electron Microscopy Study” J. E. Downes, K.E.Smith, A. Y. Matsuura, I. Lindau, E. Iliopoulos and T.D. Moustakas, Journal of Appl. Phys. 94, 5820 (2003)
     
  • “Band-gap evolution, hybridazation, and thermal stability of InxGa1-xN alloys measured by soft X-ray emission and absorption”, P. Ryan, C. McGuinness, J. E. Downes, K. E. Smith, D. Doppalapudi, and T.D.Moustakas, Phys. Rev. B 65, 205201 (2002).
     
  • "Photoluminescence Microscopy of InGaN Quantum Wells," W.D. Herzog, R. Singh, B.B. Goldberg, M.S. Unlu and T.D. Moustakas, Appl. Phys. Lett., 70, 1333, (1997).
     
  • "MBE Growth and Optical Characterization of InGaN/AlGaN Multi-Quantum Wells," R.Singh W.D. Herzog, D. Doppalapudi, M.S. Unlu, B.B. Goldberg and T.D. Moustakas, MRS. Proc., 449, 185, (1997).
     
  • "Growth of InGaN Films by MBE at the Growth Temperature of GaN," R. Singh and T.D. Moustakas, MRS Proc., 395, (1996).
  
     
  AlGaN alloys  
     
 
  • “Growth and Silicon Doping of AlGaN Films in the Entire Alloy Composition by Molecular Beam Epitaxy”, T. Xu., C. Thomidis, I.Friel, and T. D. Moustakas, Phys. Stat. Sol. (c), (2005).
     
  • “Investigation of the structure and optical properties of high Al-content AlGaN films grown by MBE” A. Bhattacharyya, R. Chandrasekaran, T. D. Moustakas Y.Wang, A. Ozcan K.F. Ludwig, Z.Lin and D. Smith, Mat. Res. Soc. Proc. (Abstract book p. 129) (Boston, MA, 2004).
     
  • “Comparative study of GaN/AlGaN MQWs grown homoepitaxially on (1-100) and (0001) GaN” A.Bhattacharyya, I. Friel, S. Iyer, T.C.Chen, W. Li, J.Cabalu, Y.Fedunin, K.F.Ludwig Jr, T.D. Moustakas, H. P. Maruska, D.W. Hill, J.J.Gallagher, M. M. Chou, B.Chai Journal of Crystal Growth, Vol. 251, 487 (2003).
     
  • “Growth Kinetics of AlGaN Films by Plasma Assisted Molecular Beam Epitaxy” E. Iliopoulos, T.D. Moustakas Appl. Phys. Lett. 81, 295 (2002).
     
  • "Soft x-ray emission studies of the bulk electronic structure of AlN, GaN and Al.5Ga.5N" K.E. Smith, L.C. Duda, C.B. Stagarescu, J. Downes, D. Korakakis, R. Siugh T.D. Moustakas, J.Guo and J. Nordgren, J. Vac. Sci. Technol. B 16, 2250 (1998)
     
  • "Density of States hybridization and band-gap evolution in AlGaN alloys” L.C. Duda, C.B. Stagarescu, J. Downes K.E. Smith, D. Korakakis, T.D. Moustakas, J. Guo, J. Nordgreen. Phys. Rev. B 56, 1928 (1998)
     
  • "Doping Studies of n- and p- type Al(x)Ga(1-x)N grown by ECR assisted MBE," D. Korakakis, H.M. Ng, K. Ludwig and T.D. Moustakas, MRS Proc., 449, 233, (1997).
 
     
  Ordering and Phase Seperation  
     
 
  • “Complex Ordering in AlGaN Thin Films” Y. Wang, A. Bhattacharyya, A.S. Ozcan, T. D. Moustakas, K. Ludwig, L.Zhou, Mat. Res. Soc. Proc. (Abstract book p. 111) (Boston, MA, 2004).
     
  • “Complex Ordering in Ternary Wurtzite Nitride Alloys” E.Iliopoulos, K.F. Ludwig, Jr, and T.D. Moustakas, Journal of Physics and Chemistry of Solids 64, 1525 (2003)
     
  • “Chemical Ordering in AlGaN Alloys Grown by Molecular Beam Epitaxy”, E. Iliopoulos, K.F. Ludwig, T.D. Moustakas and S.N.G. Chu, Appl. Phys. Lett. , 78, 463 (2001)
     
  • "Phase Separation and Ordering in InGaN Alloys”, D. Doppalapudi, S.N. Basu and T.D. Moustakas Mat. Res. Soc. Symp. Vol. 512, p.431 (1998).
     
  • ”Atomic Ordering and Phase Separation in AlGaN Alloys." T.D. Moustakas, R. Singh, D. Korakakis, D. Doppalapudi, H.M. Ng, A. Sampath, E. Iliopoulos and M. Misra. (INVITED) Mat. Res. Soc. Symp. Proc. 482,193 (1998)
     
  • "Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy," D. Doppalapudi, S.N. Basu, K.F. Ludwig, Jr. and T.D. Moustakas, J. Appl. Phys. 84, 1389 (1998).
     
  • "Phase Separation in InGaN Thick Films and Formation of InGaN/GaN Double Heterostructures in the Entire Alloy Composition," R. Singh and T.D. Moustakas, Appl. Phys. Lett. 70, 1089 (1997).
     
  • "Long Range Order in Al(x)Ga(1-x)N Films Grown by ECR-assisted MBE," D.Korakakis, K.F. Ludwig and T.D. Moustakas, Appl. Phy. Lett., 71, 72, (1997).
 
     
  Dislocation Scattering  
     
 
  • “Interfacial and Defect Structures in Multilayered GaN/ AlN Films” Ph. Komninou, Th. Kehagias, J. Kioseoglou, G. P. Dimitrakopoulos, A. Sampath, T.D. Moustakas, G. Nouet and Th. Karakostas, J. of Phys: Condens. Matter 14, 13277 (2002)
     
  • "Disorder induced IR Anomaly in Hexagonal AlGaN short-period superlattices and Alloys.", A.M. Mintrairov, A.S. Vlasov, J. L. Merz, D. Korakakis, T.D. Moustakas, A.O. Osinsky, R. Gaska and M.B. Smirnov Mat. Res. Soc. Symp. Proc. (Spring 1999)
     
  • "The role of dislocation scattering in n-type GaN films," H.M. Ng, D. Doppalapudi, T.D. Moustakas, N.G. Weimann and L.F. Eastman, Appl. Phys. Lett. 73, 821 (1998).
     
  • "Scattering of electrons at threading dislocations in GaN," N.G. Weimann, L.F. Eastman, D. Doppalapudi, H.M. Ng and T.D. Moustakas J. Appl. Phys. 83, 3656 (1998).
  
     
  Characterization  
     
 
  • “Resonant Shake-up satellites in photoemission at the Ga 3p photothreshold in GaN” L. Plucinski, T. Learmonth, L. Colakerol, S. Bernardis, Y. Zhang, P. A. Glans, K.E. Smith, A. A. Zakharov, R. Nyholm, I. Grzegory, T. Suski, S. Porowski, I. Friel and T. D. Moustakas, Phys. Rev. B. (submitted)
     
  • “Resonant Photoemission Shake-up process at the 3p photothreshold in GaN”, L. Plucinski, T. Learmonth, K.E. Smith, A. Zakharov, I. Grzegory, T. Suski, S. Porowski, B. Kowalski, I. Friel and T. D. Moustakas, Mat. Res. Soc. Proc. (Abstract book p. 145) (Boston, MA, 2004).
     
  • “Intersubband Absorption Spectra in GaN/ AlN superlattices Grown by Plasma-assisted Molecular Beam Epitaxy” I. Friel, K. Driscoll, E.Kulenica, M. Dutta, R.Paiella and T.D. Moustakas J. of Crystal Growth (Accepted).
     
  • “Time-Resolved Reflectivity Studies of Electric Field Effects in III-Nitride Semiconductors”, M. Wraback, H. Shen, A.V. Sampath, C.J. Collins, G.A. Garrett, W.L. Sarney, Y. Fedyunin, J. Cabalu, and T.D. Moustakas, Mat. Res. Soc. Proc. Vol 798, 607 (2004).
     
  • “Well width dependence of the effects of disorder on the optical properties of AlGaN/GaN quantum wells” I. Friel, C. Thomidis, T. D. Moustakas, Appl. Phys. Lett. 85, 3068 (2004)
     
  • “Investigation of excitons in AlGaN/GaN multiple quantum wells by lateral photocurrent and photoluminescence spectroscopies” I.Friel, C.Thomidis, Y.Fedyunin, T.D. Moustakas Journal of Appl. Phys. 95, 3495 (2004)
     
  • “Subpicosecond Luminescence Studies of Carrier Dynamics In Nitride Semiconductors Grown Homoepitaxially by MBE on GaN Templates” G.A.Garrett A.V. Sampath, C. J. Collins, F. Semendy, K.Aliberti, H. Shen M.Wraback, Y. Fedunin and T.D.Moustakas, Mater. Res. Soc. Symp. Proc., Vol. 743, pp. L5. 7 (2003)
     
  • “Study of group –III binary and ternary nitrides using near X-ray absorption measurements” M. Katsikini, E. C. Paloura , J.Antonopoulos, P.Bressler and T.D. Moustakas J. of Crystal Growth , 230, 405 ( 2001).
     
  • “Photoconductivity Recombination Kinetics in GaN films” M.Misra, T.D. Moustakas, Mat. Res. Soc. Symp. Vol. 662, T5.4.1 (2000)
     
  • "Vertical Transport Properties of GaN Schottky diodes Grown by molecular beam epitaxy", M. Misra, A. V. Sampath and T. D. Moustakas MRS Internet Journal Nitride Semiconductor Research, Res 5S1, W11.2 (2000).
     
  • "Structural and optical characterization of InGaN/GaN multiple quantum wells grown by molecular beam epitaxy", H. M. Ng and T. D. Moustakas J of Vacuum Sci. & Tech. -B18, 1457 (2000).
     
  • "Investigation of vertical transport in n-GaN films grown by Molecular Beam Epitaxy using Schottky barrier diodes.", M. Misra, A. V. Sampath and T. D. Moustakas Appl. Phys. Lett., 76, 1045(2000)
     
  • "Micro-Raman Imaging of GaN Hexagonal Island structures", M. Holtz, M. Seon, T. Prokofyeva, H. Temkin, R. Singh, F. P. Dabkowski, T. D. Moustakas Appl. Phys. Lett. 75, 1757 (1999).
     
  • "Nitrogen K-edge NEXAFS measurements on group-III binary and ternary nitrides.", M.Katsikini, B. C. Paloura, M. Fieber-Brdmann, B. Holub-Krappe, D. Korakakis, T. D. Moustakas J. of Electron Spectroscopy and Related Phenomena, 101-103, 695 (1999)
     
  • "Gallium K-edge EXAFS measurements on cubic hexagonal GaN”, M. Katsikini, H. Rossner, M. Fieber-Erdmann, B. Holub-Krappe, T. D. Moustakas, B. C. Paloura J. of Synchrotron Radiation, 6, 561(1999)
     
  • "Nitrogen K-edge NEXAFS measurements on group-III binary and ternary mtrides.", M. Katsikini, M. Fieber-Erdmann, B. Holub-Krappe, D. Korakakis, T. D. Moustakas, B. C. Paloura J. of Synchrotron Radiation, 6, 558 (1999)
     
  • "Generation-Recombination noise in GaN Photoconducting detectors", M. Misra, D. Doppalapudi, A.V. Sampath, T.D. Moustakas, P.H. McDonald MRS Internet J. Nitride Semicond. Res. 4s1, G7.8 (1999).
     
  • "Electron Mobility in n-GaN Films." H.M. Ng, D. Doppalapudi, R. Singh and T.D. Moustakas Mat. Res. Soc. Synip. Proc. 482, 507 (1998)
     
  • "Near Band Gap Photoluminescence Broadening in n-GaN Films." E. Iliopoulos, D. Doppalapudi, H.M. Ng and T.D. Moustakas Mat. Res. Soc. Symp. Proc. 482 ,655 (1998)
     
  • "Broadening of near-band-gap Photoluminescence in n-GaN Films." E. Iliopoulos, D. Doppalapudi, H.M. Ng and T.D. Moustakas. Appl. Phys Lett. 73, 375(1998).
     
  • "Electrical Characterization of n-GaN/p-SiC Heterostructures Grown by MOCVD and MBE." J.T. Torvik, M. Leksono, J.I. Pankove. B. Van Zeghbroeck, H.M. Ng and T.D. Moustakas Appl. Phys Lett. 72, 1371(1998)
     
  • "Optical Properties of GaN Grown Over SiO2 on SiC Substrates by MBE." J.T. Torvik, J.I. Pankove, E. Iliopoulos and T.D. Moustakas Appl. Phys. Lett., 72, 244 (1998).
     
  • "X-ray Characterization of GaN/AlGaN Multiple Quantum Wells for Ultraviolet Laser Diodes." D. Korakakis, K.F. Ludwig and T.D. Moustakas Appl. Phys Lett. 72,1004 (1998).
     
  • "Experimental Determination of the N-p-partial Density of States in the Conduction Band of GaN: Determination of the Polytype Fractions in Mixed Phase Samples." M.Katsikini, E. C. Paloura and T. D. Moustakas J. of App. Phys. 83, 1437(1998).
     
  • "Investigation of Vacancies in GaN by Positron Annihilation," L.V. Jorgensen, A.C. Kruseman, H. Schut, A. Van Veen, M. Fanciulli and T.D. Moustakas, MRS Proc., 449, 853, (1997).
     
  • "Bulk and Surface Electronic Structure of GaN Measured Using Angle-resolved Photoemission, Soft X-ray Emission and Soft X-ray Absorption," K.E. Smith, S.S. Dhesi, L.C. Duda, C.B. Stagerescu, J.H. Guo, J. Nodgren, R. Singh and T.D. Moustakas, MRS Proc., 449, 787, (1997).
     
  • "N-K- Edge EXAFS Study of Epitaxial GaN FIlms," M. Katsikini, E.C. Paloura, T.D. Moustakas, H. Amano and I. Akasaki, MRS Proc., 449, 459, (1997).
     
  • "Dertermination of the Percentage of the Cubic and Hexagonal Phases in GaN with NEXAFS," M.Katsikini, E.C. Paloura, T.D. Moustakas, E. Holub-Krappe and J. Antonopoulos, MRS Proc., 449, 411, (1997).
     
  • "Sub-bandgap Absorption of Gallium Nitride Determined by Photothermal Deflection Spectroscopy," O. Ambacher, W. Rieger, P. Ansman, H. Angerer, T.D. Moustakas, and M. Stuzman, Solid State Comm., 97, 365 (1996).
     
  • "The Optical Properties and Electronic Transitions of Cubic and Hexagonal GaN Films Between 1.5 and 10 eV," S. Logothetidis, J. Petalas, M. Cardona, and T.D. Moustakas, Materials Science and Engineering, B29, 65 (1995).
     
  • "The Effect of Plasma Source Exit Apertures on the Growth of Gallium Nitride by the Method of Electron Cyclotron Resonance Assisted Molecular Beam Epitaxy (ECR-MBE)," R.J. Molnar, R. Singh, and T.D. Moustakas, J. of Elec. Mater., 24, 275 (1995).
     
  • "Towards the Identification of the Dominant Donor in GaN," P. Perlin, T. Suski, H. Teisseyre, M. Leszczynski, I. Grzegory, J. Jun, S. Porowski, P. Boguslawski, J. Bernhole, J.C. Chervin, A. Polian, and T.D. Moustakas, Phys. Rev. Lett., 75, 296 (1995).
     
  • "Mechanism of Yellow Luminescence in GaN," T. Suski, P. Perlin, H. Teisseyre, M. Leszczynski, I. Grzegory, J. Jun, M. Bockowski, S. Porowski, and T.D. Moustakas, Appl. Phys. Lett., 67, 2188 (1995).
     
  • "Local Vibrational Modes in Mg-doped Gallium Nitride," M.S. Brandt, J.W. Ager III, W. Götz, N.M. Johnson, J.S. Harris Jr., R.J. Molnar, and T.D. Moustakas, Phys. Rev. B "Rapid Commun.", 49, 14758 (1994).
     
  • "Intensity Dependence of Photoluminescence in Gallium Nitride Thin Films," R. Singh, R.J. Molnar, M.S. Ünlü, and T.D. Moustakas, Appl. Phys. Lett., 64, 336 (1994).
     
  • "Temperature Dependance of the Energy Gap in GaN Bulk Single Crystals and Epitaxial Layer," H. Teisseyre, P. Perlin, T. Suski, I. Grzegory, S. Porowski, J. Jun, A. Pietraszko, and T.D. Moustakas, J. Appl. Phys, 76, 2429 (1994).
     
  • "Thermal Expansion of Gallium Nitride," M. Leszczynski, T. Suski, H. Teisseyre, P. Perlin, I. Grzegory, J. Jun, S. Porowski, and T.D. Moustakas, J. Appl. Phys, 76, 4909 (1994).
     
  • "Optical Properties and Temperature Dependence of Interband Transitions of Cubic and Hexagonal GaN," S. Logothetidis, J. Petalas, M. Cardona, and T.D. Moustakas, Phys. Rev. B, 50, 18017 (1994).
     
  • "EPR and (11)B NMR Studies of Boron Nitride," M. Fanciulli, T.D. Moustakas, M. Corti and A. Rigamonti, Proc. XXVII Congress Ampere on Magnetic Resonance, Kazan, Russia (August 22-29, 1994).
     
  • "Electron Transport Mechanism in Gallium Nitride," R.J. Molnar, T. Lei and T.D. Moustakas, Appl. Phys. Lett., 62, 72 (1993).
     
  • "High Mobility GaN Films Produced by ECR-Assisted MBE," R.J. Molnar, T. Lei, and T.D. Moustakas, Mat. Res. Soc.. Symp. Proc. "Semiconductor Heterostuctures for Photonic and Electronic Application", 281, 765 (1993).
     
  • "Conduction-Electron Spin Resonance in Zinc-Blende GaN Thin Films," M. Fanciulli and T.D. Moustakas, Phys. Rev. B, 48, 15144 (1993).
     
  • "EPR Investigation of Defects in Boron Nitride Thin Films," M. Fanciulli and T.D. Moustakas, Mat. Res. Soc.. Symp. Proc., 242, ed. by T.D. Moustakas, J.I. Pankove and Y. Hamakawa (1992), p. 605.
  
     
  Processing  
     
 
  • “High density plasma etching damage effects on contacts to n-GaN” Rajwinder Singh, C.R.Eddy Jr., H.M.Ng, T.D.Moustakas Mat. Res. Soc. Symp. Vol. 639 , G6.61 (2001)
     
  • "Metal Contacts to n-AlxGa1-xN.". A. Sampath, H.M. Ng, D. Korakakis and T.D. Moustakas Mat. Res. Soc. Synip. Proc. 482, 1095 (1998).
     
  • "Reactive Ion Etching of GaN Thin Films," M.J. Manfra, S.J. Berkowitz, R.J. Molnar, A.M. Clark, T.D. Moustakas, and W.J. Skocpol, Mat. Res. Soc. Symp. Proc., 324, 477 (1994).
     
  • "Metal Contacts to Gallium Nitride," J.S. Foresi and T.D. Moustakas, Appl. Phys. Lett., 62, 2859 (1993).
  
     
  Structure  
     
 
  • "Spectroscopic Studies of the Electronic Structure of the Wurtzite GaN and AlGaN.” in III-V Nitride Materials and Processes, T.D. Moustakas, S. Mohney and S. Pearton Eds, K.E. Smith, L. C. Duda, C. B. Stagarescu, S.S. Dhesi, J. Downes, R. Singh, D.Doppalapudi, T.D. Moustakas, J. H. Guo, J. Nordgren, T. Valla and P.D. Johnson ECS Proc. 98-18, 50 (1999)
     
  • “Unoccupied band structure of Wurtzite GaN (0001)", T. Valla, P.D. Johnson, S.S. Dhesi, K.E. Smith, D. Doppalapudi, T.D. Moustakas, E.L. Shirley Physical Review B 59, 5003, (1999).
     
  • "Domain Structure in Chemically Ordered InxGa1-xN Alloys Grown by Molecular Beam Epitaxy" D. Doppalapudi, S.N. Basu and T.D. Moustakas. J. Appl. Phys., 85, 883,(1999)
     
  • "Photoemission Study of the Electronic Structure of Wurtzite GaN (0001) Surfaces”. Kevin F. Smith. Sarnjeet S. Dhesi, Cristian B. Stagarescu, James Downes, D. Doppalapudi, T.D. Moustakas Mat. Res. Soc. Symp. Vol. 482, 787 (1998)
     
  • "Structure of GaN films grown by Molecular Beam Epitaxy on (0001) Sapphire," L.T. Romano, B.S. Krusor, R.J. Singh and T.D. Moustakas, J. Elect. Mat., 26, 285, (1997).
     
  • "Microstructures of GaN Films Deposited on (001) and (111) Si Using ECR-MBE," S.N. Basu, T. Lei, and T.D. Moustakas, J. Mater. Res., 9, 2370 (1994).
  
     
  Mg-doped p-GaN  
     
 
  • “Surface Electronic Structure of p-type GaN (0001)”, P. Ryan, Y.C. Chao, J. Downes, C. McGuiness, K.E. Smith, A.V. Sampath, T.D. Moustakas Surface Science 467, L827, (2000)
     
  • "Nitrogen K-edge EXAFS measurements on Mg and Si doped GaN.” M. Katsikini, T. D. Moustakas, B. C. Paloura J. of Synchrotron Radiation, 6, 555 (1999)
     
  • "Hydrogenation of Gallium Nitride," M.S. Brandt, N.M. Johnson, R.J. Molnar, R. Singh, and T.D. Moustakas, Mat. Res. Soc. Symp. Proc. "Physics and Application of Defects in Advanced Semiconductors", 325, 341 (1994).
     
  • "Hydrogenation of p-type Gallium Nitride," M.S. Brandt, N.M. Johnson, R.J. Molnar, R. Singh, and T.D. Moustakas, Appl. Phys. Lett., 64, 2264 (1994).
  
     
  Doping  
     
 
  • “p-type doping of AlGaN Alloys by plasma –assisted MBE”, Wei Li, and T. D. Moustakas, Mat. Res. Soc. Proc. (Abstract book p. 110) (Boston, MA, 2004).
     
  • “Efficient P-type Doping of GaN films by Plasma- ssisted Molecular Beam Epitaxy” A.Bhattacharyya, W.Li, J.Cabalu, T.D. Moustakas, David J. Smith and R.L. Hervig, Appl. Phys. Lett. 85, 4956 (2004)
     
  • "The Effect of Si and Mg Doping in the Microstructure of Epitaxially Grown GaN”, M. Katsikini, E. Paloura, M. Fieber-Erdmann, E. Holub-Krappe and T.D. Moustakas, Mat. Res. Soc. Symp. Vol. 482, 381(1998)