Publications  
     
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  2010 &uarr top  
     
 
  • Y. Liao, C. Thomidis, C-k Kao, A. Moldawer, W. Zhang, Yi-Chung Chang, A. Yu. Nikiforov, E. Bellotti, and T. D. Moustakas, “Milliwatt power AlGaN-based deep ultraviolet LEDs by plasma-assisted MBE” Phys. Status Solidi Rapid Research Letters 4, No.1-2, 49-51 (2010) 32
     
  • Pookpanratana, R. France, M. Blum, A. Bell, M. Bar, L. Weinhardt, Y. Zhang, T. Hofmann, O. Fuchs, W. Yang, J. D. Denlinger, S. Mulcahy, T. D. Moustakas and C. Heske, “Chemical Structure of Vanadium-based Contact formation on n- AlN” J. Appl. Phys., 108, 24906 (2010)
     
  • R. Chandrasekaran, T. D. Moustakas, A.S. Ozcan, K. F. Ludwig, L. Zhou and D. J. Smith, “ Growth Kinetics of AlN and GaN films grown by molecular beam epitaxy on R-plane sapphire substrates” J. Appl. Phys. 108, 43501 (2010)
     
  • K. Driscoll, Y. Liao, A. Bhattacharyya, T.D. Moustakas, R. Paiella, L. Zhou and D. Smith “ Optical and structural characterization of GaN /AlGaN quantum wells for intersubband device applications” Phys. Status Solidi C 7, No. 10, 2397 (2010)
     
  • J. Henson, E. Dimakis, J. Dimaria, R. Li, S. Minissale, L. Dal Negro, T. D. Moustakas and R. Paiella “Enhanced near-green light emission from InGaN quantum wells by use of tunable plasmonic resonances in silver nanoparticle arrays” Optics Express, Vol. 18, No. 20, 21322 (2010>
     
  • F. Sudradjat, K. Driscoll, Y. Liao, A. Bhattacharyya, C. Thomidis, L. Zhou, D.J. Smith, T. D. Moustakas and R. Paiella, “Sequential tunneling transport in GaN /AlGaN coupled quantum wells grown on free-standing GaN” J. Appl. Phys. 108, 103704 (2010)
     
  • Y. Liao, C. Thomidis, C-k. Kao, and T. D. Moustakas, “AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy" Appl. Phys. Lett. (submitted)
     
  • C-K Kao, A. Bhattacharyya, C. Thomidis, R. Paiella and T.D. Moustakas “Electroabsorption modulators based on bulk GaN films and GaN/AlGaN multiple quantum wells” J. Appl. Phys. (submitted)
     
  • F. Sudradjat, K. Driscoll, Y. Liao, A. Bhattacharyya, C. Thomidis, L. Zhou, D.J. Smith, T. D. Moustakas and R. Paiella, “Experimental Observation of Sequential Tunneling Transport in GaN /AlGaN Coupled Quantum Wells grown on Free- Standing GaN” Mater. Res. Soc. Symp. Proc. Vol. 1202, paper number 1202-I09-20 (2010).
     
  • R. Paiella, K. Driscoll, Y. Liao, A. Bhattacharyya, L. Zhou, D. J. Smith and T.D. Moustakas, “Short-Wavelength Intersubband Light Emission from Optically Pumped GaN / AlN Quantum Wells” Mater. Res. Soc. Symp. Proc. Vol. 1202, paper number 1202-I10-08 (2010)
     
  • Y. Liao, C. Thomidis, A. Bhattacharyya, C-k Kao, A. Moldawer, W. Zhang and T. D. Moustakas, “Development of milliwatt power AlGaN-based deep UV-LEDs by Plasmaassisted MBE” Mater. Res. Soc. Symp. Proc. Volume 1202, paper number 1202-I10-01 (2010)
     
  • R. Paiella, K. Driscoll, Y. Li, Y. Liao, A. Bhattacharyya, C. Thomidis, L. Zhou, D. J. Smith, E. Bellotti, and T. D. Moustakas, “Intersubband Device Applications of Nitride Quantum Structures” In Quantum Sensing and Nanophotonic Devices VII, Proc. of SPIE Vol.7608, 76080N, 2010 (Invited Paper)
     
  • R. Paiella, K. Driscoll, Y. Li, Y. Liao, A. Bhattacharyya, C. Thomidis, L. Zhou, D. J. Smith, and T. D. Moustakas, “Intersubband Transitions in GaN-Based Quantum Wells: a New Materials Platform for Infrared Device Applications,” SPIE Optics and Photonics, paper 7808-6, San Diego (CA), Aug 2010 (Invited Paper).
     
  • A. Bhattacharyya, T.D. Moustakas, L. Zhou and D. J. Smith, “ AlGaN Quantum wells emitting below 250 nm with internal quantum efficiency as high as 50%” Proc. of the International Workshop on the Physics of Semiconductor Devices (IWPSD- New Delhi 2009)
     
  • David J. Smith, Lin Zhou and T.D. Moustakas “Structural Characterization of III-Nitride Materials and Devices” SPIE Proceedings Vol. 7945 (2011) (Invited Paper)
     
  • A. Bhattacharyya, R. Chandrasekaran, T. D. Moustakas, Lin Zhou, David J. Smith, “Elimination of sub-bandgap emissions in high Al-content AlGaN alloys deposited by Molecular Beam Epitaxy” Appl. Phys. Lett. (submitted)
  • Lin Zhou, Martha R. McCartney, D. J. Smith, T. Xu and T. D. Moustakas, “Measurement of Electric Field in individual wurtzite GaN quantum dots” J. Appl. Phys. (submitted).
     
  • Adrian Williams and Theodore Moustakas, “Development and application of an etchback process for orientation independent planarization of GaN”, Materials Science and Engineering B (Submitted).
     
 
     
  2009 &uarr top  
     
 
  • A. Bhattacharyya, T. D. Moustakas, Lin Zhou, David J. Smith and W. Hug, “Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency” Appl. Phys. Lett. 94, 181907 (2009)
     
  • Kristina Driscoll, Yitao Liao, Anirban Bhattacharyya, Lin Zhou, David J. Smith, Theodore D. Moustakas and Roberto Paiella, “Optically pumped intersubband emission of short-wave infrared radiation with GaN/AlN quantum wells”, Appl. Phys. Lett. 94, 081120 (2009).
     
  • Enrico Bellotti, Kristina Driscoll, Theodore Moustakas and Roberto Paiella, “Monte Carlo Simulations of Terahertz quantum cascade laser structures based on wide-bandgap semiconductors”, J. Appl. Phys. 105, 113103 (2009)
     
  • Spilios Riyopoulos and Theodore D. Moustakas “One-dimensional carrier localization and effective quantum wire behavior in two-dimensional quantum wedges” J. of Appl. Phys. 106 , 044303 (2009)
     
  • J. Henson, J. C. Heckel, E. Dimakis, J. Abell, A. Bhattacharyya, G. Chumanov, T. D. Moustakas and R. Paiella, “Plasmon Enhanced Light Emission from InGaN Quantum Wells via Coupling to Chemically Synthesized Silver Nanoparticles”, Appl. Phys. Lett. 95, 151109 (2009)
     
  • Saulius Nargelas, Tadas Malinauskas, Ar?nas Kadys, Emmanouil Dimakis, Theodore D. Moustakas, and K?stutis Jarašiunas “Nonlinear carrier recombination and transport features in highly excited InN layer” Phys. Status Solidi C 6, No. S2, Pages S735-S738 (2009)
     
 
     
  2008 &uarr top  
     
 
  • E. Bellotti, N. Sucena Almeida, A. Moldawer, T. D. Moustakas, S. Chiaria, F. Bertazzi, E. Furno, M.Goano, G. Ghione, (INVITED) “Physics-based design of III-Nitride and ZnO LEDs: from material properties to device optimization” Proc. of the 17th European Workshop on Heterostructure Technology (HETECH 2008), Edited by Gaudenzio Meneghesso, pp. 21-26 (2008)
     
  • M. Misra, A. Bhattacharyya and T.D. Moustakas, “UV Detectors”, Laser Focus World, November 2008, page 64.
     
  • S. Pookpanratana, R. France, M. Bar, L. Weihardt, O. Fuchs, M. Blum, W.Yang, J. D. Denlinger, T. D. Moustakas and C. Heske, “Intermixing and Chemical Structure at the interface between n-GaN and V-based contacts” Appl. Phys. Lett. 93, 172106 (2008)
     
  • Y. Li, A. Bhattacharyya, C. Thomidis, Y. Liao, T. D. Moustakas and R. Paiella, “Refractive-Index Nonlinearities of Intersubband Transitions in GaN/AlN Quantum-Well Waveguides”, J. of Appl. Phys. 104, 083101 (2008)
     
  • T. D. Moustakas, Tao Xu, C. Thomidis, A. Yu Nikiforov, Lin Zhou and David J. Smith, “Growth of III-Nitride quantum dots and their applications to blue-green LEDs” Physica Status Solidi (a) 205, No. 11, 2560-2565 (2008).
     
  • John Henson, Anirban Bhattacharyya, Theodore D. Moustakas, and Roberto Paiella, “Controlling the recombination rate of semiconductor active layers via coupling to dispersion-engineered surface plasmons” J. Opt. Soc. of Am. B/ Vol. 25, 1328 (2008)
     
  • L. Colakerol, L. F. J. Piper, A. Fedorov, T. C. Chen, T. D. Moustakas and K. E. Smith “Observation of an inverted band structure near the surface of InN”, Europhysics Letters (EPL), 83 47003 (2008)
     
  • C. Thomidis, A. Yu. Nikiforov, Tao Xu, and Theodore D. Moustakas, “InGaN-based LEDs grown by plasma-assisted MBE on (0001) sapphire with GaN QDs in the nucleation layer” Physica Status Solidi (c) 5, 2309 (2008)
     
  • E. Dimakis, A. Yu Nikiforov, C. Thomidis, L. Zhou, D. J. Smith. J. Abell, C –K. Kao and T. D. Moustakas, “Growth and properties of near-UV light emitting diodes based on InN / GaN quantum wells” Physica Status Solidi (a) 205, 1070 (2008)
     
  • Lin Zhou, R. Chandrasekaran, T. D. Moustakas and David J. Smith, “Structural characterization of non-polar (1120) and semi-polar (1126) GaN films grown on r-plane sapphire”, J. of Crystal Growth, 310 pp. 2981-2986 (2008).
    * Also selected to appear in the Virtual Journal of Nanoscale Science & Technology (March 24, 2008, Editor David Awschalom)
     
  • Enrico Bellotti, Kristina Driscoll, Theodore D. Moustakas and Roberto Paiella, “Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures”, Appl. Phys. Lett. 92, 101112 (2008)
     
  • Josh Abell and T. D. Moustakas, “The role of dislocations as non-radiative recombination centers in InGaN MQWs” Appl. Phys. Lett. 92, 091901 (2008)
     
 
     
  2007 &uarr top  
     
 
  • Adrian Williams and T. D. Moustakas, “Formation of large-area freestanding Gallium Nitride substrates by natural stress-induced separation of GaN and sapphire”. J. Crystal Growth, 300, 37 (2007)
     
  • Ryan France, Tao Xu, Papo Chen, R. Chandrasekaran and T. D. Moustakas, “Vanadium-based Ohmic contacts to n-AlGaN in the entire alloy composition”, Appl. Phys. Lett. 90, 062115 (2007)
     
  • R. Chandrasekaran, A.S. Ozcan, D. Deniz, K.F. Ludwig, and T. D. Moustakas, “Growth of non-polar (11-20) and semi-polar (11-26) AlN and GaN films on the R-plane sapphire” Physica Status Solidi (c) 4, No.5, 1689-1693 (2007).
     
  • Sandip Basu, Michel W. Barsoum, Adrian D. Williams, and T. D. Moustakas, “Spherical Nanoindentation and Deformation Mechanism in Free-standing GaN Films” J. Appl. Phys. 101, 083522 (2007)
     
  • Yan Li, Anirban Bhattacharyya, Christos Thomidis, Theodore D. Moustakas and Roberto Paiella “ Non-linear Optical Waveguides based on near-infrared intersubband transitions in GaN/AlN Quantum Wells” Optics Express, 15, 5860-5865 (2007)
     
  • Tao Xu, A. Nikiforov, R. France, C. Thomidis, A. Williams and T. D. Moustakas, “Blue-Green-Red LEDs based on InGaN Quantum Dots (QDs) grown by molecular beam epitaxy”. Physica Status Solidi (a) 204, No. 6, 2098 (2007).
     
  • S. Riyopoulos, T. D. Moustakas and J. S. Cabalu, “Plasma nanosheath formation with carrier accumulation and enhanced localized spontaneous emission at “quantum wedges” in textured GaN”. Physics of Plasmas 14, 053501(2007)
     
  • S. Riyopoulos, T. D. Moustakas and J. S. Cabalu, “Enhanced transmission through quasirandom nanostructured dielectric interface via supercritical angle scattering”, J. Appl. Phys. 102, 043111 (2007).
    * Also selected to appear in the Virtual Journal of Nanoscale Science & Technology (Sept. 10, 2007, Editor David Awschalom)
     
  • Kristina Driscoll, Anirban Bhattacharyya, Theodore D. Moustakas and Roberto Paiella, Lin Zhou, David J. Smith, “Intersubband absorption in AlN / GaN / AlGaN coupled quantum wells”, Appl. Phys. Lett. 91, 141104 (2007)
     
  • Tao Xu, Lin Zhou, Yiyi Wang, Ahmet S. Ozcan, K. F. Ludwig, David Smith and T. D. Moustakas, “GaN Quantum Dot Superlattice Grown by Molecular Beam Epitaxy at High Temperature”, J. Appl. Phys. Vol. 102, 073517 (2007)
    * Also selected to appear in the Virtual Journal of Nanoscale Science & Technology (October 22,, 2007, Editor David Awschalom)
     
  • Y. Wang, A. Ozcan, C. Sanborn, K. Ludwig, A. Bhattacharyya, R. Chandrasekaran, T. D. Moustakas, L. Zhou, and D. Smith, "Real-Time X-Ray Studies of Gallium Nitride Nanodot Formation by Droplet Heteroepitaxy" J. of Appl. Phys. 102, 073522 (2007).
     
  • L. F. J. Piper, L. Colakerol, T. Learmonth, K. E. Smith, F. Fuchs, J. Furthmuller, Bechstedt, T-C. Chen, T. D. Moustakas and J-H Guo “Electronic structure of InN studied using soft X-ray emission, soft X-ray absorption and quasiparticle band structure calculations” Phys. Rev. B 76, 245204 (2007)
     
  • Yan Li, Anirban Bhattacharyya, Christos Thomidis, Theodore D. Moustakas and Roberto Paiella, “Ultrafast all-optical switching with low saturation energy via intersubband transitions in GaN /AlN quantum-well waveguides” Optics Express, Vol. 15, pp. 17922-17927 (2007)
     
  • Theodore D. Moustakas and Mira Misra (INVITED ) “Origin of the high photoconductivity gain in AlGaN films” in Optoelectronic Devices: Physics, Fabrication and Applications IV , Edited by J. Piprek and J. J. Wang, Proc. of SPIE Vol. 6766, p. 67660C-1 (2007)
     
  • R. Chandrasekaran, A. Bhattacharyya, R. France, C. Thomidis, A. Williams and T. D. Moustakas, “Ultraviolet light emitting diodes using non-polar a-plane AlGaN MQWs”, In advances of III-V Nitride Semiconductor Material and Devices edited by C.R. Abernathy, H. Jiang, J.M. Zavada (Mater. Res. Soc. Symp. Proc. 955E, Warrendale, PA, 2007), Paper No. 0955-I04-08.
     
  • Tao Xu, Alexey Nikiforov, Ryan France, Christos Thomidis, Adrian Williams, T. D. Moustakas, Lin Zhou and David J. Smith, “Blue-green-red LEDs based on InGaN Quantum dots by plasma-assisted MBE using GaN QDs for dislocation filtering” In advances of III-V Nitride Semiconductor Material and Devices edited by C.R. Abernathy, H. Jiang, J.M. Zavada (Mater. Res. Soc. Symp. Proc. 955E, Warrendale, PA, 2007), Paper No. 0955-I05-05.
     
 
     
  2006 &uarr top  
     
 
  • Tai-Chu P. Chen, C. Thomidis, J. Abell, W. Li and T. D. Moustakas “Growth of InN Films by RF plasma –assisted MBE and Cluster Beam Epitaxy” Journal of Crystal Growth, 288, 254 (2006).
     
  • L. Plucinski, L. Colakerol, S. Bernardis, Y. Zhang, S. Wang, C.O'Donnell, K. E. Smith, I. Friel and T. D. Moustakas, “Photoemission Study of Sulfur and Oxygen Adsorption on GaN (0001)" Surf. Sci., 600, 116 (2006)
     
  • J. C. Cabalu, C. Thomidis, I. Friel and T.D. Moustakas and S. Riyopoulos, “Enhanced internal quantum efficiency and light extraction efficiency from textured GaN/AlGaN quantum wells grown by molecular beam epitaxy” J. Appl. Phys 99, 064904 (2006).
    *Also selected to appear in the Virtual Journal of Nanoscale Science & Technology April 3, 2006, Editor David Awschalom).
     
  • Y. Wang, A. S. Ozcan, K. F. Ludwig,Jr., A. Bhattacharyya, T. D. Moustakas, L.Zhou and D. Smith, “ Complex and incommensurate ordering in Al0.72 Ga0.28N thin films grown by plasma assisted molecular beam epitaxy” Appl. Phys. Letters 88, 181915 (2006).
     
  • L. Zhou, T. Xu, D.J. Smith, and T.D. Moustakas, “Growth and Characterization of relaxed InN quantum dots grown on GaN buffer layers by Molecular Beam Epitaxy” Appl. Phys. Lett., 231906, 88 (2006)
    * Also selected to appear in the Virtual Journal of Nanoscale Science & Technology June 19th, 2006, Editor David Awschalom)
     
  • L. Colakerol, P.-A. Glans, L. Plucinski, Y. Zhang, K.E. Smith, A. A. Zakharov, R. Nyholm, J. Cabalu and T. D. Moustakas "Resonant Photoemission at the Ga 3p photothreshold in InxGa1-xN", J. Elec. Spectroscopy Rel. Phenom., 152, 25 (2006),
     
  • A. S. Ozcan, Y. Wang, K. F. Ludwig, G. Ozaydin, A. Bhattacharyya, T. D. Moustakas, and D. P. Siddon, “Real-Time X-ray Studies of Gallium Adsorption and Desorption” J. Appl. Phys. 100, 084307 (2006).
    * Also selected to appear in the Virtual Journal of Nanoscale Science & Technology (October 30, 2006, Editor David Awschalom)
     
  • J. C. Cabalu, A. Bhattacharyya, C. Thomidis T.D. Moustakas, and C. J. Collins “High power ultraviolet light emitting diodes based on GaN/AlGaN quantum wells produced by molecular beam epitaxy” J. Appl. Phys. 100 , 104506 (2006).
     
  • Y Wang, A. Özcan, G. Özaydin, K. Ludwig Jr, , A. Bhattacharyya, T. D. Moustakas, H. Zhou, R. Headrick and D. P. Siddons “Real time synchrotron x-ray studies of low and high temperature nitridation of c-plane sapphire” Phys. Rev. B. 74, 235304 (2006).
     
  • L. Colakerol, T.D. Veal, H.-K. Jeong, L. Plukinski, A. DeMasi, S. Wang, Y. Zhang, L.F.J. Piper, P.H. Jefferson, A. Fedorov, T.C. Chen, T. D. Moustakas, C.F. McConville, and K.E. Smith, “Quantized Electron Accumulation States in Indium Nitride” Phys. Rev. Lett. 97, 237601 (2006).
     
  • A. D. Williams and T. D. Moustakas "Planarization of GaN by the etch-back method” Mater. Res. Soc. Symp. Proc. Vol. 892, 363 (2006).
     
  • J. S. Cabalu, A. D. Williams, Tai-Chou P.Chen, R. France and T. D. Moustakas, “Visible Light Emitting Diodes Grown by Plasma-assisted MBE on Hydride vapor-phase epitaxy GaN templates and the development of dichromic (Phosphorless) white LEDs.” Mater. Res. Soc. Symp. Proc. Vol. 892, 245 (2006).
     
 
     
  2005 &uarr top  
     
 
  • T. Xu., C. Thomidis, I.Friel, and T. D. Moustakas, “Growth and Silicon Doping of AlGaN Films in the Entire Alloy Composition by Molecular Beam Epitaxy”, Phys. Stat. Sol. (c) 2(7), 2220 (2005).
     
  • I. Friel, K. Driscoll, E.Kulenica, M. Dutta, R.Paiella and T.D. Moustakas “Intersubband Absorption Spectra in GaN/ AlN superlattices Grown by Plasma-assisted Molecular Beam Epitaxy” J. of Crystal Growth, 278, 387 (2005).
     
  • I. Friel, C. Thomidis, T. D. Moustakas, “Ultraviolet Electroabsorption Modulator based on AlGaN/GaN Multiple Quantum Wells”, J. Appl. Phys. 97, 123515(2005).
     
  • L. Plucinski, T. Learmonth, K. E. Smith, A. Zakharov, I. Grzegory, T. Suski, S. Porowski, B. J. Kowalski, I. Friel and T. D. Moustakas, “Resonant Photoemission and Electron Localization in GaN”, Solid State Commun. 136, 91 (2005)
     
  • A. Bhattacharyya, J. Cabalu, C.Thomidis, C. J. Collins and T. D. Moustakas, “MBE grown 340 nm UV-LED structures based on GaN/AlGaN MQWs” 22nd North American Molecular Beam Epitaxy Conference. (Conference book, p.110).
     
  • Tao Xu, Adrian Williams, Christos Thomidis, and Theodore D. Moustakas, “GaN Quantum Dots grown at High Temperatures by Molecular Beam Epitaxy” Mat. Res. Soc. Proc. 831, E2.4 (2005).
     
  • J. C. Cabalu, C. Thomidis, I. Friel and T.D. Moustakas, (INVITED), “ Nitride LEDs based on Flat and “wrinkled” Quantum Wells” Quantum Sensing and Nanophotonic DevicesII, Edited by Manijeh Razeghi and Gail Brown, Proc. of SPIE, Vol. 5732, 185(2005)
     
  • S. Riyopoulos, J. Cabalu and T. D. Moustakas,“Enhanced light extraction through nano-textured GaN interfaces via supercritical angle scattering” Optoelectronic Devices: Physics, Fabrication and Applications, Edited by Joachim Piprek, Proc. of SPIE, Vol. 6013, G-1 (2005).
     
 
     
  2004 &uarr top  
     
 
  • I.Friel, C.Thomidis, Y.Fedyunin, T.D. Moustakas “Investigation of excitons in AlGaN/GaN multiple quantum wells by lateral photocurrent and photoluminescence spectroscopies” J. of Appl. Phys. 95, 3495 (2004).
     
  • I. Friel, C. Thomidis, T. D. Moustakas, “Well width dependence of the effects of disorder on the optical properties of AlGaN/GaN quantum wells”, Appl. Phys. Lett. 85, 3068 (2004)
     
  • A.Bhattacharyya, W.Li, J.Cabalu, T.D. Moustakas, David J. Smith and R.L. Hervig, “Efficient P-type Doping of GaN films by Plasma- assisted Molecular Beam Epitaxy” Appl. Phys. Lett. 85, 4956 (2004)
     
  • Jasper S. Cabalu, Liberty L. Gunter, Ian Friel, A.Bhattacharyya, Y. Fedyunin, K. Chu, E. Bellotti, C. Eddy and T. D. Moustakas Design and Fabrication of GaN –based Permeable-base Transistor” Mat. Res. Soc. Symp. Proc. Vol. 798, 85 (2004).
     
  • Doppalapudi, R. Mlcak, J. Chan, H. Tuller, A. Bhattacharya, and T. Moustakas, “ MBE Grown AlN Films on SiC for Piezoelectric MEMS Sensors” Mat. Res. Soc. Proc. Vol 798, 403 (2004).
     
  • M. Wraback, H. Shen, A.V. Sampath, C.J. Collins, G.A. Garrett, W.L. Sarney, Y. Fedyunin, J. Cabalu, and T.D. Moustakas, “Time-Resolved Reflectivity Studies of Electric Field Effects in III-Nitride Semiconductors”, Mat. Res. Soc. Proc. Vol 798, 607 (2004).
     
  • Jasper S. Cabalu, Christos Thomidis, Theodore D. Moustakas and Spilios Riyopoulos, “Enhanced Light Extraction and Spontaneous Emission from Textured GaN Templates Formed During Growth by the HVPE Method”, Proceedings of the Electrochemical Society, Vol. 2004-06, p.351 (2004).
     
  • D.Doppalapudi, R.Milcak, J.Chan, H.L.Tuller, J.Abell, W.Li and T.D. Moustakas, “Sensors based on SiC-AlN MEMS”( INVITED), Proceedings of the Electrochemical Society, Vol. 2004-06, p. 287 (2004).
     
 
     
  2003 &uarr top  
     
 
  • A.Bhattacharyya, I. Friel, S. Iyer, T.C.Chen, W. Li, J.Cabalu, Y.Fedunin, K.F.Ludwig Jr, T.D. Moustakas, H. P. Maruska, D.W. Hill, J.J.Gallagher, M. M. Chou, B.Chai “Comparative study of GaN/AlGaN MQWs grown homoepitaxially on (1-100) and (0001) GaN”, Journal of Crystal Growth, Vol. 251, 487 (2003).
     
  • E.Iliopoulos, K.F. Ludwig, Jr, and T.D. Moustakas, “Complex Ordering in Ternary Wurtzite Nitride Alloys” Journal of Physics and Chemistry of Solids 64, 1525 (2003).
     
  • J. E. Downes, K.E.Smith, A. Y. Matsuura, I. Lindau, E. Iliopoulos and T.D. Moustakas, "Surface Degradation of InGaN Thin Films by sputter-Anneal Processing: A Photoemission Electron Microscopy Study” Journal of Appl. Phys. 94, 5820 (2003)
     
  • G.A.Garrett A.V. Sampath, C. J. Collins, F. Semendy, K.Aliberti, H. Shen M.Wraback, Y. Fedunin and T.D.Moustakas,“Subpicosecond Luminescence Studies of Carrier Dynamics In Nitride Semiconductors Grown Homoepitaxially by MBE on GaN Templates” Mater. Res. Soc. Symp. Proc., Vol. 743, pp. L5. 7 (2003)
     
  • S. Iyer, D. J. Smith A. Bhattacharyya, K. Ludwig Jr. and T. D. Moustakas “Growth and Characterization of non–polar (11-20)GaN and AlGaN/GaN MQWs on R-plane (10-12) sapphire” ” Mater. Res. Soc. Symp. Proc., Vol. 743, pp. L3.20 (2003)
     
  • Y Shao, T.C. Chen, D. B. Fenner, T. D. Moustakas, and G. Chu, “Nitrogen Gas-Cluster Ion Beam –A new Nitrogen Source for GaN Growth” Mater. Res. Soc..Symp. Proc., Vol. 743, pp L3.10 (2003)
     
  • A. V. Sampath, A. Bhattacharyya, R. Singh, C.R.Eddy, P. Lamarre, W.F. Stacey, R.S. Morris and T.D. Moustakas “Growth and Fabrication of high Reverse Breakdown Heterojunctions n-GaN: p-6H-SiC Diodes’ Mater. Res. Soc. Symp. Proc., Vol. 743, pp. L6.34 (2003).
     
  • C. McGuinness, J. E. Downes, P. Ryan, K. Smith, D. Doppalapudi and T.D. Moustakas “X-ray Spectroscopic Studies of the bulk Electronic Structure of InGaN Alloys” Mat. Res. Soc. Symp. Proc. Vol. 743, pp.L10.11.1(2003).
     
 
     
  2002 &uarr top  
     
 
  • A. Bhattacharyya, I. Friel, Sandeep Iyer, E. Iliopoulos, A.V. Sampath, J. Cabalu, T.D. Moustakas, “High Reflectivity and Crack-free AlGaN/AlN UV Distributed Bragg Reflectors” J. Vac. Sci. and Technol. B 20, 1229 (2002)
     
  • E. Iliopoulos, T.D. Moustakas “Growth Kinetics of AlGaN Films by Plasma Assisted Molecular Beam Epitaxy” Appl. Phys. Lett. 81, 295 (2002).
     
  • P. Ryan, C. McGuinness, J. E. Downes, K. E. Smith, D. Doppalapudi, and T.D.Moustakas, “Band-gap evolution, hybridazation, and thermal stability of InxGa1-xN alloys measured by soft X-ray emission and absorption”, Phys. Rev. B 65, 205201 (2002).
     
  • Ph. Komninou, Th. Kehagias, J. Kioseoglou, G. P. Dimitrakopoulos, A. Sampath, T.D. Moustakas, G. Nouet and Th. Karakostas, “Interfacial and Defect Structures in Multilayered GaN/ AlN Films” J. of Phys: Condens. Matter 14, 13277 (2002).
     
  • A.V. Sampath, E. Iliopoulos, A. Bhattacharyya, I. Friel, Sandeep Iyer, J. Cabalu, T.D. Moustakas, “Growth of III-Nitrides by MBE”(INVITED) , in Widebandgap Semiconductors for Photonic and Electronic Devices and Sensors , Electrochem. Soc. Proc. 2002-3, 46 (2002).
     
  • Enrico Bellottti and T.D. Moustakas, “Design and Fabrication of GaN-based Static Induction Transistor”( INVITED), in Symposium Proceedings on Static Induction Devices, SSID02, Vol.15, (Tokyo, Japan, 2002).
     
 
     
  2001 &uarr top  
     
 
  • E. Iliopoulos, K.F. Ludwig, T.D. Moustakas and S.N.G. Chu, “Chemical Ordering in AlGaN Alloys Grown by Molecular Beam Epitaxy”, Appl. Phys. Lett. , 78,463 (2001)
     
  • T.D. Moustakas, E. Iliopoulos, A.V. Sampath, H.M. Ng, D. Doppalapudi, M. Misra, D. Korakakis, R. Singh, “Growth and Device Applications of III-Nitrides by MBE”, J. of Crystal Growth, 227-228, 13 (2001)
     
  • M. Katsikini, E. C. Paloura , J.Antonopoulos, P.Bressler and T.D. Moustakas “Study of group –III binary and ternary nitrides using near X-ray absorption measurements” J. of Crystal Growth , 230,405 ( 2001).
     
  • E.Iliopoulos, K.F.Ludwig Jr., T.D.Moustakas, Ph. Komninou, Th. Karakostas, G.Nouet, S.N.G.Chu “Epitaxial growth and self organized superlattice structures in AlGaN films grown by plasma assisted molecular beam epitaxy” Material Science and Engineering –B 87, 227 (2001)
     
  • Rajwinder Singh, C.R.Eddy Jr., H.M.Ng, T.D.Moustakas “High density plasma etching damage effects on contacts to n-GaN” Mat. Res. Soc. Symp. Vol. 639 , G6.61 (2001)
     
  • A.Sampath, A.Bhattacharyya, I.Sandeep, H.M.Ng, E.Iliopoulos, T.D.Moustakas, “MBE Growth of GaN using NH3 and Plasma sources” Mat.Res. Soc. Symp. Vol. 639 , G6.56 (2001)
     
  • R.Mlcak, D.Doppalapudi, J.Chan, A.Sampath, T.D.Moustakas, H.L.Tuller, “Micromachined SiC-AlN Bulk Resonator Array Sensor Platform for Ultra Sensitive Explosive Detection”, 3rd International Aviation Technology Symposium, (Nov 27-30, 2001).
     
 
     
  2000 &uarr top  
     
 
  • M. Misra, A. V. Sampath and T. D. Moustakas "Investigation of vertical transport in n-GaN films grown by Molecular Beam Epitaxy using Schottky barrier diodes.",Appl. Phys. Lett., 76,1045(2000)
     
  • H. M. Ng and T. D. Moustakas "High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by Molecular Beam epitaxy", Appl. Phys. Lett.,76,2818(2000).
     
  • H. M. Ng and T. D. Moustakas "Structural and optical characterization of InGaN/GaN multiple quantum wells grown by molecular beam epitaxy", J of Vacuum Sci. & Tech.-B18, 1457 (2000).
     
  • P. Ryan, Y.C. Chao, J. Downes, C. McGuiness, K.E. Smith, A.V. Sampath, T.D. Moustakas “Surface Electronic Structure of p-type GaN (0001)”, Surface Science 467,L827, (2000)
     
  • A. V. Sampath, M. Misra, K. Seth, Y. Fedyunin, H. M Ng, E. Illiopolus, Z. Fiet and T. D. Moustakas "A Comparative Study of GaN diodes grown by MBE on sapphire and sapphire/HVPE-GaN substrate", MRS Internet Journal of Nitride Semiconductor Research, 5S1, Art. No.W11.1(2000).
     
  • H. M. Ng and T. D. Moustakas "High Reflectance III-Nitride Bragg reflectors grown by molecular beam epitaxy", MRS Internet Journal of Nitride Semiconductor Research, 5S1, Art. No. W1.8 (2000).
     
  • M. Misra, A. V. Sampath and T. D. Moustakas "Vertical Transport Properties of GaN Schottky diodes Grown by molecular beam epitaxy", MRS Internet Journal of Nitride Semiconductor Research, Res 5S1, Art. No. W11.2 (2000).
     
  • H.M.Ng, T.D.Moustakas (INVITED) “Group III Nitride VCSELS structures grown by Molecular Beam Epitaxy” in Physics and Simulation of Optoelectronic Devices – Proceedings of SPIE 3944, 22 (2000).
     
  • A.V.Sampath, E.Iliopoulos, K.Seth, M.Misra, H.M.Ng, P.Lamarre, Z.Feit, T.D. Moustakas “GaN photodiodes by MBE on HVPE and ELO-HVPE/Sapphire substrates”, in Photodetectors: Materials and Devices V– Proceedings of SPIE 3948,311(2000).
     
  • M.Misra, A.V.Sampath, E.Iliopoulos, T.D. Moustakas “GaN Schottky diode ultraviolet detectors grown by MBE” in Photodetectors: Materials and Devices V-Proceedings of SPIE 3948, 342(2000).
     
  • M.Misra, T.D. Moustakas, “Photoconductivity Recombination Kinetics in GaN films” Mat. Res. Soc. Symp. Vol. 662, T5.4.1 (2000)
     
 
     
  1999 &uarr top  
     
 
  • D. Doppalapudi, S.N. Basu and T.D. Moustakas."Domain Structure in Chemically Ordered InxGa1-xN Alloys Grown by Molecular Beam Epitaxy" J. Appl. Phys., 85, 883,(1999)
     
  • H.M. Ng, D. Doppalapudi, E. Iliopoulos and T.D Moustakas."Distributed Bragg Reflectors based on AlN/GaN Multilayers." Appl. Phys. Lett. 74, 1036, (1999).
     
  • T. Valla, P.D. Johnson, S.S. Dhesi, K.E. Smith, D. Doppalapudi, T.D. Moustakas, E.L. Shirley “Unoccupied band structure of Wurtzite GaN (0001)", Physical Review B59, 5003, (1999).
     
  • D. Doppalapudi, E. Iliopoulos, S.N Basu, and T.D. Moustakas "Epitaxial Growth of Gallium Nitride Thin Films on A-Plane Sapphire by Molecular Beam Epitaxy." J. Appl.Phys. 85, 3582 (1999).
     
  • M. Misra, D. Korakakis, H.M. Ng and T.D. Moustakas."Photoconductive detectors based on partially ordered AlxGa1-xN alloys grown by molecular beam epitaxy." Appl. Phys. Lett. 74, 2203 (1999)
     
  • M. Misra, D. Doppalapudi, A.V. Sampath, T.D. Moustakas, P.H. McDonald "Generation-Recombination noise in GaN Photoconducting detectors", MRS Internet J. of Nitride Semicond. Res. 4s1, Art. No. G7.8 (1999).
     
  • G.E. Bunea, S.T. Dunham, and T.D. Moustakas "Modeling of a GaN based Static Induction Transistor", MRS Internet J. of Nitride Semicond. Res. 4s1, Art. No.G6.41 (1999).
     
  • M. Katsikini, M. Fieber-Erdmann, B. Holub-Krappe, D. Korakakis, T. D. Moustakas, B. C. Paloura "Nitrogen K-edge NEXAFS measurements on group-III binary and ternary mtrides.", J. of Synchrotron Radiation, 6, 558 (1999)
     
  • M. Katsikini, T. D. Moustakas, B. C. Paloura "Nitrogen K-edge EXAFS measurements on Mg and Si doped GaN.” J. of Synchrotron Radiation, 6, 555 (1999)
     
  • M. Katsikini, H. Rossner, M. Fieber-Erdmann, B. Holub-Krappe, T. D. Moustakas, B. C. Paloura "Gallium K-edge EXAFS measurements on cubic hexagonal GaN”, J. of Synchrotron Radiation, 6, 561(1999)
     
  • M. Katsikini, B. C. Paloura, M. Fieber-Brdmann, B. Holub-Krappe, D. Korakakis, T. D. Moustakas "Nitrogen K-edge NEXAFS measurements on group-III binary and ternary nitrides.", J. of Electron Spectroscopy and Related Phenomena, 101-103, 695 (1999)
     
  • M. Holtz, M. Seon, T. Prokofyeva, H. Temkin, R. Singh, F. P. Dabkowski, T. D. Moustakas "Micro-Raman Imaging of GaN Hexagonal Island structures", Appl. Phys. Lett. 75, 1757 (1999).
     
  • A. M. Mintrairov, A.S. Vlasov, J. L. Merz, D. Korakakis, T.D. Moustakas, A.O. Osinsky, R. Gaska and M.B. Smirnov "Disorder induced IR Anomaly in Hexagonal AlGaN short-period superlattices and Alloys.", Mat. Res. Soc. Symp. Proc. (Spring 1999)
     
  • M. Misra, D. Korakakis, H.M. Ng and T.D. Moustakas. "Ultraviolet Photoconducting Detectors based on Ordered AlGaN films grown by Molecular Beam Epitaxy." in III- V Nitride Materials and Processes, T.D. Moustakas, S. Mohney and S. Pearton Eds ECS Proc. 98-18, 30 (1999).
     
  • D. Doppalapudi, K. J. Nam, A. Sampath, R. Singh, H. M. Ng, S. N. Basu and T.D. Moustakas "Threading Defect reduction in laterally overgrown GaN films by Hydride Vapor Phase Epitaxy." in III-V Nitide Materials and Processes, T.D. Moustakas, S. Mohney and S. Pearton Eds, ECS Proc. 98-18, 87 (1999).
     
  • H. M. Ng, D.Doppalapudi, E. Illiopoulos and T.D. Moustakas "Distributed Bragg Reflectors based on AlN/GaN multilayers.", in III-V Nitride Materials and Processes, T.D. Moustakas, S. Mohney and S. Pearton Eds, ECS Proc. 98-18, 129 (1999).
     
  • K.E. Smith, L. C. Duda, C. B. Stagarescu, S.S. Dhesi, J. Downes, R. Singh, D.Doppalapudi, T.D. Moustakas, J. H. Guo, J. Nordgren, T. Valla and P.D. Johnson "Spectroscopic Studies of the Electronic Structure of the Wurtzite GaN and AlGaN.” in III-V Nitride Materials and Processes, T.D. Moustakas, S. Mohney and S. Pearton Eds, ECS Proc. 98-18, 50 (1999)
     
 
     
  1998 &uarr top  
     
 
  • J.T. Torvik, J.I. Pankove, E. Iliopoulos and T.D. Moustakas "Optical Properties of GaN Grown Over SiO2 on SiC Substrates by MBE." Appl. Phys. Lett., 72, 244 (1998).
     
  • M.Katsikini, E. C. Paloura and T. D. Moustakas "Experimental Determination of the N-p-partial Density of States in the Conduction Band of GaN: Determination of the Polytype Fractions in Mixed Phase Samples." J. of App. Phys. 83, 1437 (1998).
     
  • D. Korakakis, K.F. Ludwig and T.D. Moustakas "X-ray Characterization of GaN/AlGaN Multiple Quantum Wells for Ultraviolet Laser Diodes." Appl. Phys Lett. 72,1004 (1998).
     
  • J.T. Torvik, M. Leksono, J.I. Pankove. B. Van Zeghbroeck, H.M. Ng and T.D. Moustakas "Electrical Characterization of n-GaN/p-SiC Heterostructures Grown by MOCVD and MBE. Appl. Phys Lett. 72, 1371(1998)
     
  • N.G. Weimann, L.F. Eastman, D.Doppalapudi, H.M. Ng, and T.D. Moustakas "Scattering of Electrons at Threading Dislocations in GaN." J. Appl. Phys. 83, 3656 (1998)
     
  • H.M. Ng, D. Doppalapudi, D. Korakakis, R. Singh and T.D. Moustakas "MBE Growth and Doping of III-V Nitrides." J. of Crystal Growth,189-190,349(1998).
     
  • E. Iliopoulos, D. Doppalapudi, H.M. Ng and T.D. Moustakas. "Broadening of near-band-gap Photoluminescence in n-GaN Films." Appl. Phys. Lett. 73, 375(1998).
     
  • H.M. Ng, D. Doppalapudi, T.D. Moustakas, N.G. Weimann and L.F. Eastman "The role of dislocation scattering in n-type GaN Films." Appl. Phys. Lett 73, 821(1998).
     
  • D. Doppalapudi, S.N. Basu, K.F. Ludwig and T.D. Moustakas "Phase Separation and Ordering in InGaN alloys grown by Molecular Beam Epitaxy." J. Appl. Phys. 84, 1389(1998)
     
  • L.C. Duda, C.B. Stagarescu, J. Downes K.E. Smith, D. Korakakis, T.D. Moustakas, J. Guo, J. Nordgreen."Density of States hybridization and band-gap evolution in AlGaN alloys” Phys. Rev. B 58, 1928 (1998)
     
  • K.E. Smith, L.C. Duda, C.B. Stagarescu, J. Downes, D. Korakakis, R. Siugh T.D. Moustakas, J.Guo and J. Nordgren,"Soft x-ray emission studies of the bulk electronic structure of AlN, GaN and Al.5Ga.5N" J. Vac. Sci. Technol. B 16, 2250 (1998)
     
  • R. Singh, R. Barett, J. Gomes, F. Dabkowski and T.D. Moustakas "Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique”. MRS Internet J. of Nitride Semicond. Res. Vol.3, Art. No 13 (1998)
     
  • J. I. Pankove and T. D. Moustakas “A historical survey of Research on Gallium Nitride” in Gallium Nitride I , Semiconductors and Semimetals Vol.50, p 1 (1998)
     
  • W.D. Herzog, R. Singh, B.B.Goldberg, T.D. Moustakas, F.P. Dabkowski and M.S. Unlu, “Stimulated Emission from as-grown GaN hexagons by selective area growth hydride vapor phase epitaxy” Electron Lett. , 34, 1970 (1998)
     
  • T.D. Moustakas, R. Singh, D. Korakakis, D. Doppalapudi, H.M. Ng, A. Sampath, E. Iliopoulos and M. Misra. (INVITED) ”Atomic Ordering and Phase Separation in AlGaN Alloys." Mat. Res. Soc. Symp. Proc. 482,193 (1998)
     
  • E. Iliopoulos, D. Doppalapudi, H.M. Ng and T.D. Moustakas "Near Band Gap Photoluminescence Broadening in n-GaN Films." .Mat. Res. Soc. Symp. Proc. 482 ,655 (1998)
     
  • H.M. Ng, D. Doppalapudi, R. Singh and T.D. Moustakas "Electron Mobility in n-GaN Films." Mat. Res. Soc. Synip. Proc. 482, 507 (1998)
     
  • A. Sampath, H.M. Ng, D. Korakakis and T.D. Moustakas "Metal Contacts to n-AlxGa1-xN.". Mat. Res. Soc. Synip. Proc. 482, 1095 (1998).
     
  • D. Doppalapudi, F. Iliopoulos, S.N. Basu and T.D. Moustakas "Effect of Nitridation and Buffer in GaN Films Grown on A-plane (11-20) Sapphire.". Mat. Res. Soc. Symp. Proc. 482, 51(1998)
     
  • M. Katsikini, E. Paloura, M. Fieber-Erdmann, E. Holub-Krappe and T.D. Moustakas, "The Effect of Si and Mg Doping in the Microstructure of Epitaxially Grown GaN”, Mat. Res. Soc. Symp. Vol. 482, 381(1998)
     
  • Kevin F. Smith. Sarnjeet S. Dhesi, Cristian B. Stagarescu, James Downes, D. Doppalapudi, T.D. Moustakas "Photoemission Study of the Electronic Structure of Wurtzite GaN (0001) Surfaces”. Mat. Res. Soc. Symp. Vol. 482, 787 (1998)
     
  • D. Doppalapudi, S.N. Basu and T.D. Moustakas "Phase Separation and Ordering in InGaN Alloys”. Mat. Res. Soc. Symp. Vol. Vol.512, p.431 (1998).
     
  • T.D. Moustakas and J. P. Dismukes "Growth of bulk GaN by reaction of Ga/Sn with Activated Nitrogen" in III-VNitride Material and Processes. Edited by Abernathy et al. ECS Proc. 97-34. p.284. (1998)
     
 
     
  1997 &uarr top  
     
 
  • R. Singh, D. Doppalapudi, T. D. Moustakas and L.T. Romano, “Phase Separation in InGaN Thick Films and Formation of InGaN/GaN Double Heterostructures in the Entire Alloy Composition,” Appl. Phys. Lett, 70, 1089 (1997).
     
  • L. T. Romano, B. S. Krusor, R. J. Singh and T. D. Moustakas, “Structure of GaN Films Grown by Molecular Beam Epitaxy on (0001) Sapphire,” J. Elect. Mat. 26, 285, (1997)
     
  • W. D. Herzog, R. Singh, B. B. Goldberg, M. S. Unlu and T. D. Moustakas, “Photoluminescence Microscopy of InGaN Quantum Wells,” Appl. Phys. Lett. 70, 1333 (1997).
     
  • D. Korakakis K. F. Ludwig and T. D. Moustakas, “Long Range Order in AlxGa1-xN Films Grown by ECR-assisted MBE.” Appl. Phys. Lett., 71, 72 (1997).
     
  • M. Katsikini, E.C. Paloura, M. Fieber-Erdman, J. Kalomiros, T. D. Moustakas, H. Amano and I. Akasaki, “N-K-edge X-ray Absorption Study of Heteroepitaxial GaN Films,” Phys. Review B, 56, 13380 (1997).
     
  • Sarnjeet S. Dhesi, Cristian B. Stagarescu, Kevin Smith, D. Doppalapudi, R. Singh and T. D. Moustakas, “Surface and Bulk Electronic Structure of Thin Film Wurtzite GaN.” Phys. Review B, 56, 10271 (1997).
     
  • R. Singh, W.D. Herzog, D. Doppalapudi, M.S. Ünlü, B.B. Goldberg and T. D. Moustakas, “ MBE Growth and Optical Characterization of InGaN/AlGaN Multi-quantum Wells” Mat. Res. Soc. Symp. Vol. 449, 185 (1997).
     
  • D. Korakakis, H.M Ng, K. Ludwig and T. D. Moustakas, “Doping Studies of n- and p- type AlxGa1-xN grown by ECR assisted MBE” Mat. Res. Soc. Symp. Vol. 449, 233 (1997).
     
  • M. Katsikini, E. C. Paloura, M. Fieber-Erdmann, T. D. Moustakas, H. Amano and I. Akasaki, “N-K- Edge EXAFS Study of Epitaxial GaN Films,” Mat. Res. Soc. Symp.Vol. 449, 459 (1997).
     
  • M. Katsikini, E. C. Paloura, T. D. Moustakas, E. Holub-Krappe and J. Antonopoulos “Determination of the Percentage of the Cubic and Hexagonal Phases in GaN with NEXAFS,” Mat. Res. Soc. Symp. Vol. 449, 411 (1997).
     
  • M. Misra, D. Korakakis, R. Singh, A. Sampath and T. D. Moustakas, “Photoconducting Properties of Ultraviolet Detectors based on GaN and AlxGa1-xN Grown by ECR-assisted MBE,” Mat. Res. Soc. Symp. Vol., 449, 597 (1997).
     
  • L.V. Jorgensen, A.C. Kruseman, H. Schut, A. Van Veen, M. Fanciulli and T. D. Moustakas, “ Investigation of Vacancies in GaN by Positron Annihilation,” Mat. Res. Soc. Symp. Vol. 449, 853 (1997)
     
  • K. E. Smith, S. S. Dhesi, L. C. Duda, C. B. Stagerescu, J. H. Guo, J. Nordgren, R. Singh and T. D. Moustakas, “Bulk and Surface Electronic Structure of GaN Measured Using Angle-resolved Photoemission, Soft X-ray Emission and Soft X-ray Absorption,” Mat. Res.Soc. Symp.Vol. 449, 787 (1997).
     
  • H.M. Ng, D. Doppalapudi, D. Korakakis, R. Singh and T.D. Moustakas. (INVITED) “MBE Growth and Doping of III-V Nitrides.” Proceedings of the Second International Conference on Nitride Semiconductors. pp. 10-12 (Tokushima, Oct. 27-31, 1997)
     
  • T.D. Moustakas, D. Korakakis, D. Doppalapudi and R. Singh. (INVITED) “MBE Growth of III-V Nitride Alloys and MQWs for Visible and UV emitters.” Proceedings of the Workshop on III-V Nitrides-based Short-wavelength Optoelectronic Devices and Materials. pp. 9-16 (Tokushima, Nov. 1, 1997)
     
 
     
  1996 &uarr top  
     
 
  • O. Ambacher, W. Rieger, P. Ansmann, H. Angerer, T. D. Moustakas and M. Stutzmann, “Sub-band-gap Absorption of Gallium Nitride Determined by Photothermal Deflection Spectroscopy,” Solid State Comm., 97, 365 (1996).
     
  • R.P. Vaudo, I.D. Goepfert, T. D. Moustakas, D.M. Beyea, T.J. Frey and K. Meehan, “Characteristics of Light-emitting Diodes Based on GaN p-n Junctions Grown by Plasma-assisted MBE,” J. Appl. Phys., 79, 2779 (1996).
     
  • W. Halverson, R. Patel, M. Horenstein, T. D. Moustakas, K. C. Tsai and G. McGurrer, “Vacuum Flashover on Diamond-like Carbon-coated Insulators,” IEEE Transactions on Dielectrics and Electrical Insulation, 3, 108 (1996).
     
  • C. Wetzel, S. Fischer, J. Kruger, E. E. Haller, R.J. Molnar, T. D. Moustakas, E.N. Mokhov and P.G. Baranov “Strongly Localized Excitons in Gallium Nitride,” Appl. Phys. Lett. 68, 2556 (1996).
     
  • R. Singh, D. Doppalapudi and T. D. Moustakas, “Growth and Properties of InxGa1-xN/ AlyGa1-yN Multi-quantum wells developed by Molecular Beam Epitaxy,” Appl. Phys. Lett, 69, 2388 (1996)
     
  • M. Katsikini, E. C. Paloura and T. D. Moustakas, “Application of Near-edge X-ray Absorption Fine Structure for the Identification of Hexagonal and Cubic Poltypes in Epitaxial GaN,” Appl. Phys. Lett., 69, 4206 (1996).
     
  • M. Fanciulli, S. Jin and T. D. Moustakas, “Nitrogen in Diamond Thin Films,” Physica B, 229, 27 (1996).
     
  • C. B. Stagarescu, L. C. Duda, K. E. Smith, J. H. Guo, J. Nordgren, R. Singh and T. D. Moustakas, “Electronic Structure of GaN Measured Using Soft X-ray Emission and Absorption,” Phys. Rev. B, 54, 17,335 (1996).
     
  • D. Korakakis, H.M. Ng, M. Misra, W. Grieshaber and T. D. Moustakas, “Growth and Doping of AlGaN Alloys by ECR-assisted MBE,” MRS Internet Journal of Nitride Semiconductor Research, 1, Art. No.10 (1996).
     
  • T. D. Moustakas,(INVITED) “Epitaxial Growth of GaN Films Produced by ECR-assisted MBE,”Mat. Res. Soc. Symp. Vol. 395, 111 (1996).
     
  • E. Bretschneiden, A. Davydov, L. Wang, T.J. Anderson, H.P. Maruska, P.E. Norris, I. Goepfert and T. D. Moustakas, “ZnS/Si/ZnS Quantum Well Structures for Visible Light Emission,” Mat. Res. Soc. Symp. Vol. 405, 295 (1996).
     
  • D. Korakakis, A. Sampath, H.M. Ng, G. Morales, I.D. Goepfert and T. D. Moustakas, “Growth and Doping of GaN Directly on 6H-SiC by MBE,” Mat. Res. Soc. Symp. Vol. 395, 151, (1996).
     
  • T. D. Moustakas, R. P. Vaudo, R. Singh, D. Korakakis, M. Misra, A. Sampath and I.D. Goepfert, (INVITED) “Growth of III-V Nitrides by ECR-assisted MBE and Fabrication of Opto-electronic Devices,” Inst. Phys. Conf. Ser. No 142. (Paper presented at Silicon Carbide and Related Materials, 1995 Conf., Kyoto, Japan) 833.
     
  • R. Singh and T. D. Moustakas, “Growth of InGaN Films by MBE at the Growth Temperature of GaN,” Mat. Res. Soc. Symp. Vol. 395, 163 (1996).
     
  • R. Singh and T. D. Moustakas, (INVITED) “Growth of InGaN Films Produced by Electron Cyclotron Resonance-assisted Molecular Beam Epitaxy,” in III-V Nitride Materials and Processes, T. D. Moustakas, J.P. Dismukes and S.J. Pearton, eds., ECS Proc., 96-11, 186 (1996).
     
  • T. D. Moustakas and R. J. Molnar, “Growth of Polycrystalline Scandium Nitride by ECR-MBE,” in III-V Nitride Materials and Processes, T. D. Moustakas, J.P. Dismukes and S.J. Pearton, eds, ECS Proc., 96-11, 197 (1996).
     
  • J. P. Dismukes and T. D. Moustakas, “The Potential of ScN-GaN Heterojunctions and Alloys for Wide-band-gap Semiconductor Devices and Displays,” in III-V Nitride Materials and Processes, T. D. Moustakas, J.P. Dismukes and S.J. Pearton, eds., ECS Proc., 96-11, 110 (1996).
     
  • M. Katsikini, E. C. Paloura, J. Kalomiros, P. Bressler and T. D. Moustakas, “Angular Dependence of the NEXAFS Structure in Hexagonal and Cubic GaN,” Proceeding of the 23rd International Conference on the Physics of Semiconductors, ed. M. Scheffler and R. Zimmerman (World Scientific, Singapore 1996) 573.
     
 
     
  1995 &uarr top  
     
 
  • R. J. Molnar, R. Singh and T. D. Moustakas, “Blue-violet Light Emitting Gallium Nitride p-n Junctions Grown by Electron Cyclotron Resonance-assisted Molecular Beam Epitaxy,” Appl. Phys. Lett., 66, 268 (1995).
     
  • R.J. Molnar, R. Singh and T. D. Moustakas, “The Effect of Plasma Source Exit Apertures on the Growth of Gallium Nitride by the Method of Electron Cyclotron Resonance Plasma-assisted Molecular Beam Epitaxy (ECR-MBE),” J. of Electronic Materials, 24, 275 (1995).
     
  • S. Logothetidis, J. Petalas, M. Cardona and T. D. Moustakas, “The Optical Properties and Electronic Transitions of Cubic and Hexagonal GaN Films Between 1.5 and 10 eV,” Materials Science and Engineering, B29, 65 (1995).
     
  • P. Perlin, T. Suzki, H. Teisseyre, M. Leszczynski, L. Grzegory, J. Jun, S. Porowski, P. Boguslawski, J. Bernhole, J.C. Chervin, A. Polian and T. D. Moustakas, “Toward the Identification of the Dominant Donor in GaN,” Phys. Rev. Lett., 75, 296 (1995).
     
  • T. Suski, P. Perlin, H. Teisseyre, M. Leszczynski, I. Grzegory, J. Jun, M. Bockowski, S. Porowski and T. D. Moustakas, “Mechanism of Yellow Luminescence in GaN,” Appl. Phys. Lett., 67, 2188 (1995).
     
  • M. Fanciulli, M. Lindroos, G. Weyer and T. D. Moustakas “110Sn Mossbauer Spectroscopy Study of Ion Implanted GaN,” Mater. Sci. Forum 196-201, 61 (1995).
     
  • H. Teisseyre, P. Perlin, M. Leszcynski, T. Suski, L. Dmowski, I Grzegory, S. Porowski, J. Jun and T.D. Moustakas, “Epitaxial Layers versus bulk single-crystals of GaN-Temperature studies of Lattice-parameters and Energy Gap”Acta Physica Polonica 87, 403 (1995).
     
  • M. Misra, T. D. Moustakas, R.P. Vaudo, R. Singh and K.S. Shah, “Photoconducting Ultraviolet Detectors Based on GaN Films Grown by Electron Cyclotron Resonance Molecular Beam Epitaxy,” Proc. of SPIE Conference on X-ray and UV Sensors and Applications, 2519, 78 (1995).
     
  • L. D. Zhu, P.E. Norris, J. Zhao, R. Singh, R. Molnar, O. Razumovsky and T. D. Moustakas, “Growth and Characterization of p/n type GaN grown at reduced substrate temperatures by plasma-enhanced MOCVD” Institute of Physics Conference Series 141, 113 (1995).
     
 
     
  1994 &uarr top  
     
 
  • T. D. Moustakas, “CVD Diamond Synthesis Methods and Effects of Process Parameters” Synthetic Diamond: Emerging CVD Science and Technology K. E. Spear and J.P. Dismukes, eds., (John Wiley and Sons, N.Y., 1994.)
     
  • M. Fanciulli and T. D. Moustakas, “Native Paramagnetic Defects in Diamond Films,” Materials Science Forum, 143-147, 35 (1994).
     
  • R. Singh, R. J. Molnar, M.S. Unlu and T. D. Moustakas, “Intensity Dependence of Photoluminescence in Gallium Nitride Thin Films,” Appl. Phys. Lett, 64, 336 (1994).
     
  • S. Jin, M. Fanciulli and T. D. Moustakas, “Electronic Characterization of Diamond Films Prepared by Electron Cyclotron Resonance Microwave Plasma,” Diamond and Related Materials, 3, 878 (1994).
     
  • S. N. Basu, T. Lei and T. D. Moustakas, “Microstructures of GaN Films Deposited on (001) and (111) Si Using ECR-MBE,” J. Mater. Res., 9, 2370 (1994).
     
  • M. S. Brandt, N. M. Johnson, R.J. Molnar, R. Singh and T. D. Moustakas, “Hydrogenation of p-type gallium nitride,” Appl. Phys. Lett., 64, 2264 (1994).
     
  • M.S. Brandt, J. W. Ager III, W. Gotz, N.M. Johnson, J.S. Harris Jr., R.J. Molnar and T. D. Moustakas, “Local Vibrational Modes in Mg-doped Gallium Nitride,” Phys. Rev. B Rapid Commun., 49, 14758 (1994).
     
  • S. Jin and T. D. Moustakas, “Effect of Nitrogen on the Growth of Diamond Films,” Appl. Phys. Lett., 65, 403 (1994).
     
  • H. Teisseyre, P. Perlin, T. Suski, I. Grzegory, S. Porowski, J. Jun, A. Pietraszko, and T. D. Moustakas, “Temperature Dependence of the Energy Gap in GaN Bulk Single Crystals and Epitaxial Layer,” J. Appl. Phys., 76, 2429 (1994).
     
  • R. J. Molnar and T. D. Moustakas, “Growth of Gallium Nitride by Electron Cyclotron Resonance Plasma-assisted Molecular Beam Epitaxy; The Role of Charged Species,” J. Appl. Phys., 76, 4587 (1994).
     
  • M. Leszczynski, T. Suski, H. Teisseyre, P. Perlin, I. Grzegory, J. Jun, S. Porowski and T. D. Moustakas, “Thermal Expansion of Gallium Nitride,” J. Appl. Phys., 76, 4909 (1994)
     
  • S. Logothetidis, J. Petalas, M. Cardona and T. D. Moustakas, “Optical Properties and Temperature Dependence of Interband Transitions of Cubic and Hexagonal GaN,” Phys. Rev. B, 50, 18017 (1994).
     
  • M.J. Manfra, S.J. Berkowitz, R.J. Molnar, A.M. Clark, T. D. Moustakas and W. J. Skocpol, “Reactive Ion Etching of GaN Thin Films,” Mat. Res. Soc. Symp. Proc., 324, 477 (1994)
     
  • M.S. Brandt, N.M. Johnson, R. J. Molnar, R. Singh and T. D. Moustakas, “Hydrogenation of Gallium Nitride,” Physics and Applications of Defects in Advanced Semiconductors, Mat. Res. Soc. Symp, 325, 341 (1994).
     
  • M. Fanciulli, T. D. Moustakas, M. Corti and A. Rigamonti, “EPR and 11B NMR Studies of Boron Nitride,” Proc. XXVII Congress Ampere on Magnetic Resonance, K. M. Salikov, ed., (Kazan, Russia, August, 1994,) 1, 430.
     
  • J. Pankove, S.S. Chang, H. C. Lee, R.J. Molnar, T. D. Moustakas and B. Van Zeghbroeck, “High-temperature GaN/SiC Heterojunction Bipolar Transistor with High Gain,” IEDM-94, 389, (1994).
     
 
     
  1993 &uarr top  
     
 
  • T. D. Moustakas, T. Lei and R. J. Molnar, “Growth of GaN by ECR-assisted MBE,” Physica B, 185, 36 (1993).
     
  • M. Fanciulli and T. D. Moustakas, “Study of Defects in Wide Band-gap Semiconductors by Electron Paramagnetic Resonance,” Physica B, 185, 228 (1993).
     
  • C. R. Eddy, T. D. Moustakas and J. Scanlon, “Growth of Gallium Nitride Thin Films by Electron Cyclotron Resonance Microwave Plasma-assisted Molecular Beam Epitaxy,” J. Appl. Phys., 73, 448 (1993).
     
  • R. J. Molnar, T. Lei and T. D. Moustakas, “Electron Transport Mechanism in Gallium Nitride,” Appl. Phys. Lett., 62, 72 (1993).
     
  • J. S. Foresi and T. D. Moustakas, “Metal Contacts to Gallium Nitride,” Appl. Phys. Lett., 62, 2859 (1993).
     
  • T. Lei, K. F. Ludwig and T. D. Moustakas, “Heteroepitaxy, Polymorphism and Faulting in GaN Thin Films on Silicon and Sapphire Substrates,” J. Appl. Phys., 74, 4430 (1993).
  • S. Jin and T. D. Moustakas, “Growth of Diamond Thin Films by Plasma-assisted CVD at Low Pressures and Temperatures,” Diamond and Related Materials, 2, 1355 (1993).
     
  • M. Fanciulli and T. D. Moustakas, “Conduction-electron Spin Resonance in Zinc-blende GaN Thin Films,” Phys. Rev. B, 48, 15144 (1993).
     
  • M. Fanciulli and T. D. Moustakas, “Defects in Diamond Thin Films,” Phys. Rev. B, 48, 14982 (1993).
     
  • S. Jin and T. D. Moustakas, “Electrical Conductivity Studies of Diamond Films Prepared by Electron Cyclotron Resonance Microwave Plasma,” Appl. Phys. Lett., 63, 2354 (1993).
     
  • S. Jin and T. D. Moustakas, “Morphology of Diamond Films Produced by ECR-PACVD,” Evolution of Surface and Thin Film Microstructure, Mat. Res. Soc. Symp. Proc 280, 701 (1993).
     
  • R. J. Molnar, T. Lei and T. D. Moustakas, “High Mobility GaN Films Produced by ECR-assisted MBE,” Semiconductor Heterostructures for Photonic and Electronic Applications, Mat. Res. Soc. Symp. Proc, 281, 765 (1993).
     
  • T. D. Moustakas and R. J. Molnar, (INVITED) “Growth and Doping of GaN Films by ECR-assisted MBE,” Mater. Res. Soc. Symp. Vol. 281, 753 (1993).
     
  • W. Paul, A. J. Lewis, G.A.N. Connell and T. D. Moustakas, “Doping Schottky Barrier and p-n Junction Formation in Amorphous Ge and Si by RF Sputtering,” Solid State Commun., 88, 1019 (1993), A Celebratory Issue to Commemorate 30 Years of Solid State Communications, (previously published in 20, 969, (1976)).
     
 
     
  1992 &uarr top  
     
 
  • T. Lei, T. D. Moustakas, R. J. Graham, Y. He and S. J. Berkowitz, “Epitaxial Growth and Characterization of Zinc-blende Gallium Nitride on (001) Silicon,” J. Appl. Phys., 71, 4933 (1992).
     
  • M. Fanciulli and T. D. Moustakas, “Study of Defects in Diamond Films with Electron Paramagnetic Resonance Measurements,” J. of Diamond and Related Materials, 1, 773 (1992).
     
  • T. D. Moustakas, R. J. Molnar, G. Menon and C.R. Eddy Jr., “A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-assisted MBE,” Mat. Res. Soc. Symp. Proc., 242, T. D. Moustakas, J. I. Pankove and Y. Hamakawa, eds., (1992), p. 427.
     
  • T. Lei and T. D. Moustakas, “A Comparative Study of GaN Epitaxy on Si (001) and Si(111) Substrates,” Mat. Res. Soc. Symp. Proc., 242, T. D. Moustakas, J. I. Pankove and Y. Hamkawa, eds, (1992), p.433.
     
  • T. D. Moustakas, R. J. Molnar and T. Lei, “Growth of Tetrahedral Phases of Boron Nitride Thin Films by Reactive Sputtering,” Mat. Res. Soc. Symp. Proc., 242, T. D. Moustakas, J. I. Pankove and Y. Hamakawa, eds., (1992), p.599.
     
  • M. Fanciulli and T. D. Moustakas, “EPR Investigation of Defects in Boron Nitride Thin Films,” Mat. Res. Soc. Proc., 242, T. D. Moustakas, J. I. Pankove and Y. Hamakawa, eds. (1992), p.605.
     
  • Y. Bar-Yam, T. Lei, T. D. Moustakas, D. C. Allan, and M. P. Teter, “Quasi-equilibrium Nucleation and Growth of Diamond and Cubic Boron-Nitride,” Mat. Res. Soc. Symp. Vol. 242, T. D. Moustakas, J. I. Pankove and Y. Hamakawa, eds., (1992). p.335.
     
  • S. Jin, R. Molnar, D.Jong, and T. D. Moustakas, “Characterization of Electron Cyclotron Resonance Plasmas for Diamond Deposition,” in Diamond Optics V Proc. of SPIE, Vol. 1759, 41 (1992).
     
  • J. S. Foresi and T. D. Moustakas, “Piezoresistance and Quantum Confinement in Microcrystalline Silicon,” Mat. Res. Soc. Symp. Vol., 256, S. S. S. Iyer, R. T. Collins and L. T. Canham, eds. (1992).
     
  • S. Jin, M. Fanciulli, D. Jong, Y. He and T. D. Moustakas, “Properties of Optically Smooth Diamond Thin Films Produced by ECR-PACVD,” in Diamond Optics V Proc. of SPIE, Vol. 1759, 116 (1992).
     
 
     
  1991 &uarr top  
     
 
  • T. Lei, M. Fanciulli, R. J. Molnar, T. D. Moustakas, R. J. Graham and J. Scanlon “Epitaxial Growth of Zincblende and Wurtzitic Gallium Nitride Thin Films on (001) Silicon,” Appl. Phys. Lett., 59, 944 (1991).
     
  • T. Lei, M. Toledo-Quinones, R. J. Molnar and T. D. Moustakas, “Excitonic Transitions in GaAs-AlGaAs Superlattices Studied with Lateral Photoconductivity,” Solid State Comm., 80, 129 (1991).
     
  • R. J. Graham, T. D. Moustakas, M. M. Disko, “Cathodoluminescence Imaging of Defects and Impurities in Diamond Films Grown by Chemical Vapor Deposition,” J. Appl. Phys., 69, 3212 (1991).
     
 
     
  1990 &uarr top  
     
 
  • T. D. Moustakas, J. Scanlon, J. Y. Koo, H. W. Deckman, A. Ozekcin, R. Friedman and J. A. Henry, “Tungsten Carbide-transition Metal Multilayers,” Mat. Sci. and Eng., B (1990).
     
  • A. Werner, M. Kunst and T. D. Moustakas, “Influence of the Impurity Concentration on Charge Carrier Dynamics in GaAs Films,” Appl. Phys. Lett., 56, 1558 (1990).
     
  • T. D. Moustakas and R. G. Buckley, , (INVITED) “Growth of Polycrystalline Diamond Films by Filament-assisted CVD of Hydrocarbon,” in Physics & Applications of Amorphous Semiconductors, F. Demichelis Ed. (World Scientific, 1990), pp. 108-127.
     
  • Y. Bar-Yam and T. D. Moustakas, “Theory and Experiment: Defect Stabilization of Diamond Films Through Multiple-regrowth,” Mat. Res. Soc. Symp. Proc., 162, 201 (1990).
     
  • T.D. Moustakas, (INVITED) “Nucleation and Growth of Diamond Thin Films,” Proc. on the 20th International Conference on the Physics of Semiconductors, E.M. Anastassakis and J.D. Joannopoulos, eds. (World Scientific, 1990) pp. 320-327.
     
  • E. DeObaldia, T. D. Moustakas, J. Hettengier and J. S. Brooks, “Pt-SiO2 Granular Metals for Cryogenic Thermometry in High Magnetic Fields,” Mat. Res. Soc. Symp. Proc., 195, 659 (1990).
     
  • C.R.Eddy and T.D. Moustakas “Growth of GaN single crystal films by electron-cyclotron resonance –assisted Molecular Beam Epitaxy”, J. of Electronic Materials, 19, (July 1990)
     
 
     
  1989 &uarr top  
     
 
  • Y. Bar-Yam and T. D. Moustakas, “Defect-induced Stabilization of Diamond Films,” Nature, 342, 786 (1989).
     
  • T. D. Moustakas, J. Y. Koo, A. Ozekein and J. Scanlon, “Structure of Tungsten Carbide-Cobalt Multilayers,” J. Appl. Phys., 65, 4256 (1989).
     
  • T. D. Moustakas, “The Role of the Tungsten Filament in the Growth of Polycrystalline Diamond Films by Filament-assisted CVD of Hydrocarbons,” Solid State Ionics, 32-33, 861 (1989).
     
  • R. G. Buckley, T. D. Moustakas, Ling Ye and J. Varan, “Characterization of Filament-assisted Chemical Vapor Deposition Diamond Films Using Raman Spectroscopy,” J. Appl. Phys., 66, 3595 (1989).
     
  • M. M. Disko and T. D. Moustakas, “Electron Microscopy and Spectroscopy of Vapor Deposited Diamond,” Mat. Res. Soc. Symp. Proc., 138, 261 (1989).
     
  • A. Werner, T. D. Moustakas and M. Kunst, “Transient Photoconductivity in GaAs Films Grown by Molecular Beam Epitaxy,” Mat. Res. Soc. Symp. D., 145, 461 (1989).
     
  • A. Werner, A. Agarwal, T. D. Moustakas and M. Kunst, “Charge Carrier Recombination in Alx Ga1-xAs Studied by Time-resolved Microwave Conductivity Experiments,” Mat. Res. Soc. Symp. Proc., 145, 481 (1989).