Fundamental Materials Science Research
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Cluster Ion beam epitaxy of III-nitrides
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This project aims at developing ion beam cluster deposition for the growth of
III-nitrides with particular emphasis on the growth of InN and GaN at low temperatures.
It is funded by the ONR(Office of Naval Research).
| People involved in project:
Papo Chen
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Gas cluster ion beam epitaxy
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The gas cluster ion beam epitaxy is one of the newest methods currently being studied
for the growth and processing of materials. The method utilizes clusters of 2000-3000
molecules instead of single monomers. The clusters are being ionized with single charges
prior to their acceleration and disintegration on the substrate. The method has the
potential to control the energy of the individual atoms
of the disintegrated cluster and thus effect the epitaxial growth. It is funded by
MURI laboratory instrumentation design research for scalable next generation epitaxy.
| People involved in project:
Josh Abell
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Development of GaN substrates by hydride vapor epitaxy
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The focus of this project is to develop both quasi-GaN substrates(templates) on sapphire
as well as free standing GaN substrates. Such substrates are used as
templates for the development of both visible and UV LEDs. It is funded by the ARL(Army Research Laboratory).
| People involved in project:
Adrian Williams
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Device Research - Emitters
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Low cost blue/UV LEDs with high photon
conversion and extraction efficiency for white lighting
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The project is based on utilizing GaN quasi-substrates produced by the HVPE method in the production of
efficient UV-blue/green LEDs for solid state white lighting.
The active part of the device is based on InGaN/GaN MQWs grown by the MBE method on top of such substrates.
The project focuses on innovative concepts that improve the extraction efficiency as
well as the internal quantum efficiency of the LED structures. It is funded by the DOE(Dept. of Energy).
| People involved in project:
Jasper Cabalu
Tao Xu
Alvin Stern
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Comparative studies of UV LEDs emitting at 280nm growing on polar and
non-polar direction of AlN substrates and templates
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This project addresses materials physics issues related to growth of III-nitride alloys
along polar and non-polar directions and the fabrication and characterization of UV LEDs
based on MQWs grown along those directions. Particular emphasis is placed in understanding
the role of elimination of the quantum confined
stark effect in LEDs grown along non-polar directions. This project is funded by DARPA(Defense Advanced Research Projects Agency).
| People involved in project:
Ramya Chandrasekaran
Ryan France
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Compact Photonic Explorers Consortium – UV Emitters and Detectors
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This project involves a consortium of universities aiming at miniaturizing a system
consisting of an UV emitters and detectors, spectrometers, transmitters, etc to be
used for diagnostic purposes.
Our specific task is in the fabrication of the UV emitters. It is funded by Infotonics Technology Center, Inc.
through the City University of New York.
| People involved in project:
Anirban Bhattacharyya
Ramya Chandrasekaran
Jasper Cabalu
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Development of deep UV laser structures on to a-plane sapphire substrates
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This project aims at the fabrication of an electron beam pumped laser structure
emitting at 230-250nm. The purpose of this laser is for the identification of chemical
and biological substances using Raman spectroscopy. It is funded by Photon Systems, a small
company in Pasadena, CA.
| People involved in project:
Anirban Bhattacharyya
Adam Moldawer
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III-nitride quantum cascade lasers for the 3-5um atmospheric window
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This project is carried out in collaboration with prof Paiella of
ECE and aims at fabricating a quantum cascade laser based on III-nitride semiconductors.
These devices are based on intersubband transitions in nitride quantum wells.
Currently, there is no room temperature operating laser in the 3-5 um spectral region.
Our activity focuses on the materials growth and that of prof Paiella’s is on the design,
fabrication, and characterization of the laser. It is funded by ARL.
| People involved in project:
Anirban Bhattacharyya
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Device Research - Transistors
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A novel GaN heterojunction biopolar transistor for
advances T/R modules for x-band radar performance enhancement
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This project aims at growing and fabricating a bipolar junction transistor based on GaN.
It is funded by Photronix, Inc, a small company in Boston, MA.
| People involved in project:
Wei Li
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