The WBSL is located on the 8th floor of the Center for Photonics Research. This a view of the Charles River from our laboratory on a nice day.
The Wide Bandgap Semiconductor Laboratory is a state-of-the-art facility dedicated to studying the growth, fundamental material properties, and fabrication of novel electronic and opto-electronic devices. The lab specializes in III-nitride growth by Molecular Beam Epitaxy(MBE) and Hydride Vapor Phase Epitaxy(HVPE). It has a history in the development of LEDs and currently continues to focus on LEDs and semiconductor lasers in the blue-UV region of the electromagnetic spectrum.
 
UV LED
Research Highlights
 
  Visible and UV LEDs:   This research aims at developing efficient blue/UV LEDs for solid state lighting as well as for detection of chemical and biological agents by excitation of their fluorescence.
  UV semiconductor lasers:   Prototype lasers emitting below 250nm are being developed for detection of chemical and biological agents using Raman excitation.
  HVPE GaN templates:   This program is aiming at developing freestanding GaN substrates or thick GaN templates on sapphire substrates. Such substrates are currently being used for the development of UV and blue-green LEDs for solid state lighting applications.
  Nitrogen cluster source:   A Gas cluster source has been incorporated in one of our MBE systems and is being used for the development of a variety of materials, such as AlN, GaN, and InN. These clusters are ionized and accelerated to voltages up to 30kV and used for growth as well as processing of materials.
  A-plane growth of GaN:   GaN grows along the A-direction when deposited onto R-plane sapphire. The polarization vector of the A-plane is in its plane rather than perpendicular to the plane. Thus, devices based on MQWs are not suffering from the QCSE.

Pic of the moment

Diagram showing a cluster impacting on a surface with the various effects and typical applications [Yamada et al. (2001)].