|  Abstract:
The last two decades have seen significant advances in the development of visible light emitting devices and diode lasers. Red and blue lasers are now available commercially. But green light, with the highest response for the human eye, remains the most difficult to achieve efficiently using semiconductor materials. The development of green laser diodes will allow projection displays, and holographic 3-D TV. The current challenges are due to the physical nature of InGaN alloys used for this purpose. Three important aspects of InGaN alloys that need to be understood and controlled are: (a) relaxation of lattice misfit, (b) thermodynamic instability, and (c) polarization effects. This talk will review recent advances in understanding the physical complexity of these materials and will discuss the perspectives for achieving high efficiency green light emitting devices.
Biography:
Fernando Ponce is a Professor of Physics at Arizona State University. His research focuses on the physics of semiconductor materials, in particular for light emitting and sensing applications. He received his BS degree in Physics from the National University of Engineering (UNI) in Lima, Peru, and PhD degree in Materials Science and Engineering from Stanford University. He worked at Hewlett-Packard Laboratories in Palo Alto, California (1980-1984), and at the Xerox Palo Alto Research Center (1977-1980, 1984-1998). He has contributed to growth and characterization of photovoltaic materials, to the development of materials for optoelectronic applications and of high-resolution transmission electron microscopy. He has co-authored over 200 papers and eight patents; and has co-edited nine books. He has been involved in promoting science in Latin America, where he has participated in the organization of several international meetings. He was Meeting Chair of the 1999 Fall MRS Meeting, and Chair of the 27th International Conference on the Physics of Semiconductors held in Arizona in 2004. His current interest is in the understanding of the materials properties of III-V nitrides, and their correlation to growth and to device performance for solid state lighting. He is a fellow of the American Physical Society. Since 1999, he has been at the Department of Physics, Arizona State University, Tempe, AZ |
