Theodore Moustakas


Professor Emeritus (MSE, ECE) Distinguished Professor of Photonics and Optoelectronics

Professor Emeritus (MSE, ECE)
Distinguished Professor of Photonics and Optoelectronics

  • Primary Appointment Department of Electrical and Computer Engineering
  • Education PhD, Columbia University, 1974
  • Additional Affiliations Division of Materials Science & Engineering
  • Honors and Awards Inaugural Distinguished Professor of Photonics and Optoelectronics, Boston University, 2014
    Fellow, IEEE, 2014
    Innovator of the Year Award, Boston University, 2013
    Charter Fellow, National Academy of Inventors, 2012
    Distinguished Scholar, BU College of Engineering, 2011
    Innovator Award, Molecular Beam Epitaxy, 2010
    Dean’s Catalyst Award, BU College of Engineering, 2009
    Cited in “Technology Transfer Works: 100 Cases from research to realization,” Better World Project, 2006
    Honorary degree “Doctor Honris Causa,” for Excellence in Research, Aristotle University, 2003
    Fellow, Electrochemical Society, 1997
    Fellow, American Physical Society, 1994
    Award for Excellence in Teaching, BU Department of ECE, 1998
    Technical Advisor to UN Industrial Development Organization, 1989
    Co-Editor of eight books, including Gallium Nitride I (Academic Press, 1998) and Gallium Nitride II (academic Press, 1999), the author of chapters in eight books and more than 360 papers in technical journals
    Holds 36 U.S. patents and several are pending in the fields of nitride semiconductors, amorphous silicon and diamond materials. Intellectual property that resulted from his work has been licensed to more than 40 companies, including major manufacturers and users of blue LEDs and lasers (Cree, Nichia, Philips, OSRAM, Apple, Amazon, Microsoft, Hewlett-Packard, Dell, Motorola, Samsung, LG, Sony, Panasonic, Sharp, NEC, Blackberry, Nokia etc.)
  • Classes Taught EC411
    EC471 Physics of Semiconductor Devices
    EC577 Electronic Optical and Magnetic Properties of Materials
    EC700 Advanced Special Topics
    EC771 Physics of Compound Semiconductor Devices
    EC892 Seminar: Electro-Physics
  • Areas of Interest A broad spectrum of topics in optoelectronic materials and devices, including nitride semiconductors, amorphous semiconductors, III-V compounds, diamond thin films and metallic multi-layers.


Selected Publications

  • T. D. Moustakas and R. Paiella, “Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz: a review” (Invited) Rep. Prog. Phys. 80, 106501 (2017)
  • T. D. Moustakas, “Ultraviolet Optoelectronic devices based on AlGaN alloys grown by MBE”, MRS Communications, Vol. 6, pp. 247-269 (2016) DOI:10.1557/mrc.2016.26
  • T. D. Moustakas “The role of extended defects on the performance of optoelectronic devices in nitride semiconductors” Physica Status Solidi A 210, No.1, 169-174 (2013). DOI 10.1002/pssa.201200561
  • E. Francesco Pecora, Wei Zhang, Lin Zhou, David J. Smith, Jian Yin, Roberto Paiella, Luca Dal Negro, T. D. Moustakas, “Sub-250nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band structure potential fluctuations”, Phys. Lett. 100, 061111 (February 2012)
  • F. Pecora, W. Zhang, A. Yu. Nikiforov, J. Yin, R. Paiella, L. Dal Negro and T. D. Moustakas, “Sub-250 nm light emission and optical gain in AlGaN materials” J. Appl. Phys. 113, 013106 (Jan. 2013)
  • Wei Zhang, A. Yu. Nikiforov, C. Thomidis, J. Woodward, H. Sun, Chen-Kai Kao, D. Bhattarai, A. Moldawer, L. Zhou, D. J. Smith and T. D. Moustakas, “MBE growth of AlGaN quantum wells on 6H-SiC substrates with high internal quantum efficiency” Journal of Vacuum Science and Technology B 30 (2), 02B119-1 (March 2012)
  • D. Moustakas and A. Bhattacharyya, “The role of liquid phase epitaxy during growth of AlGaN by MBE”,Phys. Status Solidi C 9, No. 3–4, 580–583 (January 2012)
  • Josh Abell and T. D. Moustakas, “The role of dislocations as non-radiative recombination centers in InGaN MQWs” Phys. Lett. 92, 091901 (2008)
  • E. Dimakis, A. Yu Nikiforov, C. Thomidis, L. Zhou, D. J. Smith. J. Abell, C –K. Kao and T. D. Moustakas, “Growth and properties of near-UV light emitting diodes based on InN / GaN quantum wells” Physica Status Solidi (a) 205, 1070 (2008)
  • W. Pan, E. Dimakis, G.T. Wang, T.D. Moustakas, and D.C. Tsui, “Two-dimensional electron gas in monolayer InN quantum wells”, Appl. Phys. Lett. 105, 213503 (2014)
  • A. Bhattacharyya, T. D. Moustakas, Lin Zhou, David J. Smith and W. Hug, “Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency” Appl. Phys. Lett. 94,181907 (2009)
  • Y. Liao, C. Thomidis, C-K. Kao, and T. D. Moustakas, “AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy” Appl. Phys. Lett. 98, 081110 (February 2011)
  • T. D. Moustakas, Y. Liao, C-k. Kao, C. Thomidis, A. Bhattacharyya, D. Bhattarai and A. Moldawer (Invited paper), “Deep UV-LEDs with high IQE based on AlGaN alloys with strong band structure potential fluctuations” Proc. of SPIE Vol. 8278, 82780L-1 (March 2012)


Affiliation: Emeritus (ECE), Primary & Affiliated Faculty (MSE), Primary Faculty (MSE)