MSE Colloquium Speaker: Sigurd Wagner

  • Starts: 3:00 pm on Friday, October 19, 2018
  • Ends: 4:00 pm on Friday, October 19, 2018

Sigurd Wagner

Princeton University

Professor Emeritus of Electrical Engineering and Senior Scholar

Faculty Host: Theodore Moustakas

Student Host: Peco Myint

Refreshments at 2:45 PM

Semiconductor Materials - From Silicon Integrated Circuits in 1970 to Flexible Electronics in 2018

Abstract:

Semiconductors are an inexhaustible source of fascinating materials research and powerful applications. I will discuss research that reaches from the beginning of integrated circuits in 1970 to current work on large-area electronic systems. “My” materials included silicon wafers and films of hydrogenated amorphous silicon, as well as binary, ternary and quaternary stoichiometric compound semiconductors including InP, CdS, ZnO, CuInSe2, and Cu2CdSnS4. Devices made from these, mostly diodes and transistors, are applied in integrated circuits, flat-panel displays, light-emitting diodes, photodetectors, and solar cells. Eventually, the thin-film techniques developed for device fabrication led to the conception of flexible, conformably-shaped, and elastically stretchable electronics. Moving forth and back between research and application relied heavily on interdisciplinary collaborations, which in turn became highly stimulating idea-generators.

Bio:

Sigurd Wagner is Professor Emeritus of Electrical Engineering and Senior Scholar at Princeton University, where he has been working since 1980. He received his Ph.D. in physical chemistry in 1968 from the University of Vienna in Austria, came to the US as a post-doc at Ohio State University, worked at Bell Labs from 1970 to 1978, and was the founding chief of the Photovoltaic Research Branch at the Solar Energy Research Institute (now NREL) from 1978 to 1980. In collaboration with colleagues and students, he has been introducing fundamentally new materials, concepts, devices, and structures to thin-film electronics: The first heterojunction solar cell with a ternary compound semiconductor, CuInSe2, and a quaternary compound, Cu2CdSnS4, among others; the Fermi-level dependence of the density of dangling-bond recombination centers in hydrogenated amorphous silicon; microfluidic fundamentals of forming device patterns by printing, and the design and fabrication of microfluidic devices with fluid flow controlled by programmed temperature gradients; foundational experiments on flexible, rollable, elastically stretchable, and conformably shaped electronic surfaces, and their basic design rules and architecture. At present he is working with his colleagues James C. Sturm and Naveen Verma on the demonstration of complete large-area hybrid thin-film/CMOS-circuit systems for sensing applications.

Location:
15 Saint Mary's Street, Room 105
Registration:
http://www.bu.edu/eng/files/2018/10/Flyer.Wagner.V2.pdf

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