Wide Band Gap Semiconductors

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Phone number: (617) 353-1248
Location: PHO 839
Associated faculty: Moustakas

In this laboratory, we investigate the growth, fabrication and characterization of devices based on the family of III-Nitride semiconductors. The materials are grown by MBE, MOCVD, HVPE and Gas cluster Ion-beam deposition (GCIB). The current focus is in the development of Optical Devices (Blue, Green, and UV-LEDs, UV-LDs, Optical Modulators, Detectors), Electronic Devices (High Power Diodes, Transistors and Thyristors) and Electromechanical Devices (SiC/III-Nitride MEMS sensors). Materials physics issues are also addressed and the group collaborates closely with Professor Enrico Bellotti in the area of theoretical modeling, Professor Karl Ludwig (Physics) in the area of materials structure, Professor Kevin Smith (Physics) in the area of electronic structure, and Professor Roberto Paiella in the area of devices based on intersubband transitions.