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Micro/Nano Biosystems Fabrication Facilities

Lab director: Dr. Ze’ev Feit
Location: ERB 718 and ERB 712 [7th floor of 44 Cummington Street, Boston MA]

The facilities are intended for the processing of Micro and Nano scale features in 4” and smaller diameter Silicon wafers. They consist of temperature and humidity controlled class 100 and class 1000 clean rooms suitable for photolithography.

Training and General Policies

Click here to view a detailed list of our training and general policies


Plasma Asher

TePla M4L PVA Plasma Asher
The model M4L PVA TePla RF Plasma Processing System for etch, strip, clean and surface treatment is a programmable automatic instrument with a built in computer and a touch screen graphic display that enables on screen access to recipes, process follow-up and on screen editing and activation. Ultra high purity O2 and Ar are available as process gases and are supplied to the rectangular three-shelf aluminum chamber via MFC controllers. The chamber is served by a Varian TriScroll 600 Dry scroll mechanical vacuum pump (oil free). Plasma is generated by an integral auto-matched, air-cooled, 600 watts, 13.56 MHz RF generator.

Mask Aligners

MA6 Mask Aligner
The MA6/BA6 Karl Suss Mask Aligner is designed for photolithography applications in R&D projects and small scale production of wafers up to 6" diameter or substrates up to 6"x6" for fine lithography of 1 micron resolution or better using top (TSA – Top Side Alignment) and bottom (BSA – Bottom Side Alignment) exposure. Our hardware, however, is capable to deal only with 3" and 4" wafers or 3"x3" and 4"x4" substrates. The hardware accepts mask sizes of 4" and 5" respectably. The MA6 is equipped with a 350-Watt Hg light source capable of exposure in 365 nm (I-line) and 405 nm (H-line) wavelengths in the 300-420 Watt power range.

The MA6 mask aligner is capable of providing five contact modes between mask and substrate (soft contact, hard contact, vacuum contact, low vacuum contact and proximity) each enabling different levels of substrate handling and optical resolution.

The BA6 option - Karl Suss aligner may be converted to Bond Alignment operation (Presently, this item is not available).

MJB 3 Mask Aligner
The MJB3 Karl Suss Mask Aligner is designed for high-resolution photolithography in an R&D environment. The MJB 3 offers flexibility in the handling of irregular shaped substrates of different thicknesses, as well as standard wafers up to 3" diameter. It is equipped with a 200 Watt Hg short-arc lamp capable of exposure in 365 nm (I-line) and 405 nm (H-line) wavelengths. This aligner performs exposures in hard contact, soft contact and proximity modes that can be adjusted manually. Line/space resolution of 1.5 microns and alignment accuracies of 0.2 micron can be obtained under optimum conditions.


Rudolph Ellipsometer

The Rudolph AutoEL II ellipsometer is an optical instrument for measuring film thickness and index of refraction. It works by allowing light of known polarization to interact with a thin film structure. In general, the reflected light has a polarization different from the incident light. Knowing the polarization states of the light before and after reflection allows you to calculate film thickness and refractive index (given certain assumptions about the film structure). The Rudolph Ellipsometer is capable of performing ellipsometric measurements at three wavelengths: 405, 633, and 830 nm. An external PC with customized software converts the measured Δ and Φ values into thickness and refractive index.


Delta 80 RC/T3
The Suss Delta 80 RC/T3 Spinner system is a computerized multi-step manual (one wafer at a time) spinner system with two programmable hot plates, designed to coat wafers. A large number of pre-programmed recipes can be store and used as required. The spinner offers both the patented Gyrset system and conventional open bowl coating with high acceleration capabilities needed for some thin resist applications. The Delta 80 can process delicate wafers up to 8" (200mm) or substrate up to 6"x6" (150mm x150mm), however, our hardware is capable to handle only 3" and 4" wafers as well as 3"x3" and 4"x4" substrates. A quick exchange system allows for easy changeover between wafer sizes. The Delta 80 patented Gyrset technology contributes to the ability of the spinner to reproducibly coat thick resist evenly over the substrate. The adjacent hot plates serve for immediate access to soft bake and post bake steps. In addition the system has Edge Bead Removal capability.

The BIDTEC SP 100 Spin Coater system is a user programmable spinner suitable for photoresist applications. The microprocessor in the coater can store one spinning program with predetermined 3 spinning speeds per application and controlled acceleration/deceleration values. Wafer size is subject to the choice of the vacuum chuck which holds the wafer (sample) during spinning.

E-Beam Evaporator

Sharon Vacuum E-Beam evaporator
The custom made Sharon vacuum evaporator is primarily used to deposit metal on Si wafers and other appropriate substrates. The system achieves the high vacuum conditions necessary for evaporation with the help of a CTI (Helix) CryoTorr 8 - a closed loop He Cryopump – and a Varian TriScroll 600 Dry Scroll mechanical roughing pump which ensures oil free environment in the evaporation chamber. Evaporation is performed utilizing two multi-crucible Telemark model 265 Electron Beam guns, each having 4 pockets with appropriate liners. Ni, Al, Au, Ag, Cr, Cu and Ti are currently available for evaporation (one pocket is available for Pt or other metals). Real time thickness monitoring and evaporation rate control is performed by two Sycon model STC – 2000 thickness monitors, each controlling one of the E-Beam guns. An additional thickness monitor head is located in the vicinity of the substrate holder. Evaporation rate and layer thickness is controlled via the Sycon thickness monitors which control shutters and the E- Guns. The sample holder is water-cooled and its speed of rotation is operator controlled.


Oerlikon 790 PECVD deposition system
The Oerlikon 790 Series Plasma Enhanced Chemical Vapor Deposition (PECVD) system is a computer controlled RF powered plasma system used for the deposition of SiO2, Silicon Nitride and Silicon Oxy-Nitride on Si and other wafers. For the depositions the system utilizes ultra-High purity SiH4 (5% in 95% He) mixture, NH3, N20, He, N2 that are supplied (as necessary) via Mass Flow Controllers. During process vacuum is maintained by a Leybold TriVac D40 BSC mechanical vacuum pump and a Booster Vane pump and is controlled by a throttle valve. Growth is performed with cathode temperatures in the range of 80-350 C and the process gas is supplied via the showerhead top anode. The system will accept substrates limited to 8" in diameter and smaller. User can access pre-existing run-recipes or program and store his/her own run-recipes.


Veeco Dektak 8 Stylus Profiler
The Dektak 8 is an advanced surface texture measuring system that accurately measures surface texture below sub-micron and film thickness to 262 micrometers. The Dektak 8 takes measurements electromechanically by moving the sample beneath a diamond tipped stylus. The high precision stage moves a sample beneath the stylus according to user programmed scan length, speed and stylus force. During motion, surface variations cause the stylus to be translated vertically. The stylus, which is mechanically coupled to the core of a Linear Variable Differential Transformer, produces an analog signal proportional to the position change. The analog signal is in turn conditioned and converted to a digital format by a high precision A to D converter which is processed to produce and display measurement results.

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